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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v55.i9.100
12 pages

Hole-Electron Phenomena in the p+p Diode

A. N. Shekhovtsov
V. Karazin National University of Kharkov, 4, Svoboda Sq.; and Institute of Single Crystals, National Academy of Sciences of Ukraine Kharkov, Ukraine
N. A. Shekhovtsov
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine

RESUMO

Energy conditions are found for the dynamic equilibrium in a p+p junction. An equation has been derived for the voltage-current characteristic of the p+p junction and p+p diode. The dependence of the differential capacitance on the voltage across the junction has been obtained. It is shown that the p+p junction capacitance changes its sign from positive to negative as the reverse voltage is increased.


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