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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v55.i9.90
3 pages

Properties of Photoconverters with Active Layer of Cadmium Telluride Containing an lsovalent Impurity of Oxygen

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
M. V. Demych
Yu. Fedkovych Chernivtsy National University, 2, Kotsubynsky St., Chernivtsy, 58012, Ukraine

RESUMO

The electrical and photoelectrical properties of metal - cadmium telluride contacts with a transition layer containing isovalent an oxygen impurity are investigated. The role of the impurity in the formation of native dot defects ensemble, and in the increase of temperature and radiative stability of devices is analyzed. Efficiency 13 % of the phototransform at 300 K and AM2 illumination conditions is achieved with no application of special clarifying coats and optimization of photoelectric cell design.


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