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Telecommunications and Radio Engineering
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ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v71.i14.30
pages 1271-1282

PARAMETERS OF SECONDARY ELECTRON PROCESSES IN HOMOGENEOUS HF-SHF ELECTRIC FIELDS OF RESONANCE STRUCTURES

L. D. Lobzov
National Scientific Center "Kharkiv Physical and Technological Institute", 1, Academicheskaya St., Kharkiv, 61108

RESUMO

It is shown that the energy of electrons emitted from the surfaces of electrodes of the diode gap of the unit resonance cell, are spotted not only amplitude and a phase of the voltage enclosed at this moment, but also the dynamic quality factor of cell Q. At Q >> 1. In an initial part of a half-period when the instantaneous values of the voltage amplitudes are small, terminating energies of the accelerated primary electrons incidented on an electrode, are small as well. Thus its secondary electron emission properties caused by specified quantities of energies are characterized by the coefficient of secondary electron emission δ as maximal (δ > 1). In the subsequent part of a half-period of a voltage, the instantaneous values of its amplitudes and, accordingly, energies of the accelerated primary electrons, are more than the initial ones. And its secondary electron emission properties are characterized by the coefficient δ, like usual ones with δ < 1. The drop in the quality factor to Q ∼ 10...1 leads to essential narrowing in an interval of phases and a range of small energies of primary electrons in the initial part of a half-period of time. Thus the energies transmitted inner electrons of the opposite electrode during the half-period of time, characterize its secondary electron emission properties as common ones with δ < 1.


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