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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v70.i9.50
pages 809-818

NEGATIVE DIFFERENTIAL CONDUCTIVITY OF A TUNNEL SIDE- BOUNDARY SEMICONDUCTOR DIODE

E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine
O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine

RESUMO

The diodes having a negative differential conductivity (NDC), due to the tunneling or resonance tunneling of electrons through the lateral diode faces is under consideration. These diodes can be used for frequency generation, amplification and multiplication. The condition for NDC realization, currents and current-voltage characteristics are determined. The problems supposed to be solved in the further investigations of diodes with tunnel- and resonance-tunnel side boundaries are set. The planar and sandwich-type diode structures are offered.

Referências

  1. Zye, S., Physics of semiconductor devices.

  2. Dolmanov, I.N., Tolstikhin, V.I., and Elenskij, B.G., Semiconductor devices with resonance tunneling.

  3. Buzaneva, E.V., Microstructures of integral electronics.

  4. Esaki, L., New Phenomenon in Narrow Germanium p-n junction.

  5. Dragunov, V.P., Neizvestny, I.G., and Gridchin, V.A., Fundamental nanoelectronics.

  6. Kravchenko, A.F. and Ovsyuk, V.N., Electronic processes in the low-solid-state circuits with a reduced dimension.

  7. Roger Lake and Yang Junjie, Physics Based model for the RTD quantum capacitance.

  8. Schulman, J.N., De Los Santos, H.J., and Chow, D.N., Physics-Based RTD current voltage equation.


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