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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v76.i10.60
pages 891-901

HETEROSTRUCTURE-BASED DIODE WITH CATHODE STATIC DOMAIN

O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
K. H. Prykhodko
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine

RESUMO

The microwave noise sources with high noise power spectral density have a number of important applications, including communications, automotive radar location, and radiometry. However, at present time there are not many efficient solid-state noise generators at frequencies above 40 GHz. The proposed active element for noise generating (heterostructure-based diodes with the cathode static domain) may be one of them. In these paper the static, impedance and noise characteristics of the GaAs–AlGaAs and AlGaAs–GaAs-based structures were investigated. In this structure the static domain of the strong field is formed due to doping profile at the heterojunction. The characteristics of considered diodes are compared to those of similar GaAs-based devices. The existence of regions in diodes with negative resistance at frequencies close to 50 GHz was shown. The GaAs–AlGaAs-based heterostructure has the best performance for a noise generation in the frequency range of 25...75 GHz. The main properties of proposed structures are determined and can be used for the further detailed analysis of physical processes and manufacturing.


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