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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v72.i8.80
pages 741-744

PHYSICAL PROPERTIES OF CdSe HETEROLAYERS WITH ISOVALENT TELLYRIUM IMPURITY

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
M. M. Slyotov
Institute of Physical-Technical and Computer Science, Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubinsky Str., 58012 Chernivtsi, Ukraine
A. M. Slyotov
Institute of Physical-Technical and Computer Science, Yuriy Fedkovych Chernivtsi National University, 2, Kotsyubinsky Str., 58012 Chernivtsi, Ukraine

RESUMO

Properties of solenide cadmium heterolayers obtained by the method of isovalent substitution on monocrystalline substrates of CdTe and ZnSe have been investigated. The energy gap width determined from the reflection spectrum is ~2.0 eV and corresponds to the CdSe cubic modification. Analysis of electric and luminescent characteristics was performed with taking into account the mechanisms of intrinsic point defect generation caused by the presence of Te and Zn impurities in the layers under study.


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