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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i16.70
pages 1501-1519

Silicon Radiation Detectors − Materials and Application

Yu. V. Trubitsyn
Humane University "Zaporizhzhya institute of State and Municipal Management", 70B, ZhukovskiiSt, Zaporizhzhya, 69002, Ukraine
D. I. Levinzon
Humane University "Zaporizhzhya institute of State and Municipal Management", 70B, ZhukovskiiSt, Zaporizhzhya, 69002, Ukraine

RESUMO

Nowadays, silicon detectors of nuclear radiations are available in a wide diversity of topologies and types. This diversity has become possible due to continuous increase in the quality and the diameter of the grown Si-monocrystals, development of new equipment technologies and research techniques, which are involved in the development of detectors. We have considered the essential characteristics of four main groups of the detectors on the basis of different technologies for formation of the p-n-transitions: diffusion, ion-implanted, surface-barrier and lithium-drift, with the relevant requirements to the silicon crystals. Crystal-type imperfections related to compensation with the lithium ions are represented. Equipment technologies and research techniques are described. The topologies of coordinate-sensitive detectors for recording of traces of the high-energy particles and X-ray crystallography are discussed. The experimental results obtained with using of the above devices are provided.


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