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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v57.i8-9.110
6 pages

Current Characteristics of Heterogeneous Conducting Microstructures of Integrated Circuits on Exposure to Electromagnetic Fields

V. V. Starostenko
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine

RESUMO

In the paper the current density distributions have been obtained for heterogeneous conducting microstructure elements being included in an integrated circuit chip on exposure to electromagnetic fields. The influence of parameters of metallic film heterogeneity on the value of the current flowing in the metallization has been found out. The dependence of the threshold current density on the pulse duration has been obtained for microregions of a heterogeneous structure in the metallization. The influence of adjacent microstructure elements and boundary conditions on the character of this dependence has been determined.


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