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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v68.i19.50
pages 1735-1739

Electrophysical Properties of Zinc Selenide Diffusion Layers Doped with 3-D Elements from the Vapor Phase

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
O. V. Kinzersky
Yuri Fedkovych Chernivtsi National University, 2, Kotsyubynsky str., Chernivtsi, 58012
K. S. Ul'yanitski
Yuri Fedkovych Chernivtsi National University, 2, Kotsyubynsky str., Chernivtsi, 58012

RESUMO

This paper demonstrates the possibility of doping zinc selenide crystals with 3-D elements obtained by diffusing from the vapor phase in a closed volume. It has been proven that the used transition metals (Ti, V, Mn, Fe and Co), though influencing the resistivity, do not change the polarity of conductivity of the base substrates n−ZnSe. The ionizing energy of electrically active sites in the subjects of inquiry and the diffusion coefficients of 3-D elements at the doping temperature have been determined.


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