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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v69.i20.70
pages 1837-1849

MAGNETORESISTANCE OF A NONSTATIONARY MAGNETIC TUNNEL JUNCTION

D. V. Abdulkadyrov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkiv 61085, Ukraine
N. N. Beletskii
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkov 61085

RESUMO

Electron tunneling through a non‐stationary magnetic tunnel junction as an approximation of a low‐amplitude alternating electric field has been investigated. Dependences of active andpassive components of a high‐frequency tunneling magnetoresistance through a magnetic junction on the frequency and the applied constant bias voltage have been studied.


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