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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v75.i16.60
pages 1483-1494

DOUBLE SPLITTING OF MULTIPLICATION LAYER IN AVALANCHE GENERATOR DIODES AND GENERATION OF TWO-FREQUENCY SELF-EXCITED OSCILLATIONS

K. A. Lukin
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

RESUMO

Development of high-power sources of electromagnetic oscillations in microwave and THz frequency bands is a challenge for radio-electronic engineers. Design of avalanche-generator diodes that generate two phase locked oscillations in microwave and THz ranges is considered in the paper. Summation of two generating oscillations with either close or different frequencies allows managing power and spectral characteristics of the output signal. The physical processes occurring in the avalanche-generator diodes on the basis of abrupt Si and GaAs p–n-junctions at the constant reverse biased voltage are investigated. The effect of double splitting of the multiplication layer has been revealed. In the suggested avalanche-generator diodes, regular and chaotic self-oscillations of electron and hole components of the output power are excited in p- and n-regions of the p–n-junction, respectively.


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