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Telecommunications and Radio Engineering
SJR: 0.203 SNIP: 0.44 CiteScore™: 1

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v64.i8.40
pages 625-638

Method of Calculation of Avalanche p−n Junction in Self-Excited Mode

P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

RESUMO

The method of finite differences for calculation of avalanche p−n junctions in self-excited oscillation mode is proposed. It is demonstrated that the solution for nonlinear equations set of drift-diffusion model of p−n junctions found with the help of this method is satisfying the boundary conditions at mobile boundaries of the depletion region and the continuity conditions at the boundary of separation of p− and n− regions. The results of calculation of density of charges, electrical field and electrical potential of GaAs avalanche p−n junctions are given.


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