Inscrição na biblioteca: Guest
Portal Digital Begell Biblioteca digital da Begell eBooks Diários Referências e Anais Coleções de pesquisa
Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

Volumes:
Volume 78, 2019 Volume 77, 2018 Volume 76, 2017 Volume 75, 2016 Volume 74, 2015 Volume 73, 2014 Volume 72, 2013 Volume 71, 2012 Volume 70, 2011 Volume 69, 2010 Volume 68, 2009 Volume 67, 2008 Volume 66, 2007 Volume 65, 2006 Volume 64, 2005 Volume 63, 2005 Volume 62, 2004 Volume 61, 2004 Volume 60, 2003 Volume 59, 2003 Volume 58, 2002 Volume 57, 2002 Volume 56, 2001 Volume 55, 2001 Volume 54, 2000 Volume 53, 1999 Volume 52, 1998 Volume 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v57.i12.60
4 pages

The Mechanisms Forming Photoelectrical Properties of p-GaSe-n-InSe Heterojunction

Z. D. Kovalyuk
Chernivtsi branch of Institute for Materials Science Problems National Academy of Sciences of Ukraine, 58001, Iryna Vilde St. 5 Chernivtsi, Ukraine
Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
O. I. Yanchuk
Chernivtsi branch of Institute for Materials Science Problems National Academy of Sciences of Ukraine, 58001, Iryna Vilde St. 5 Chernivtsi, Ukraine

RESUMO

The forming mechanisms of spectral and integral properties p-GaSe-n-InSe photodiodes are investigated versus their electrophysical parameters of heterojunction components. From our investigation it follows that the photocarriers are generated in the spatial charge area localized in the less doped heterostructure component. Experimental values of photocurrent activation energies at the maxima of the photosensitivity spectrum are equal to ~ 1.2 and ~ 1.0 eV, which correlate well with band gap of materials forming the junction.


Articles with similar content:

Resonant-Tunneling Cathode for a Gunn Diode
Telecommunications and Radio Engineering, Vol.68, 2009, issue 5
E. D. Prokhorov, I. P. Storozhenko, O. V. Botsula
CHARACTERISTICS OF THE WAVEGUIDE-DIELECTRIC RESONATOR WITH TWO MODIFICATIONS OF THE SHORT-CIRCUIT PLUNGER
Telecommunications and Radio Engineering, Vol.72, 2013, issue 10
I. G. Skuratovskiy, A. P. Motornenko, R. I. Belous, O. I. Khazov
STRUCTURE AND PROPERTIES OF ULTRAHIGH MOLECULAR WEIGHT POLYETHYLENE FILLED WITH TUNGSTEN BORIDE AND CARBON BLACK
Nanoscience and Technology: An International Journal, Vol.6, 2015, issue 2
Victor V. Tcherdyntsev, A. A. Boykov, V. N. Gulbin
MODEL MICROWAVE MIXERS BASED ON ABRUPT p−n JUNCTIONS
Telecommunications and Radio Engineering, Vol.69, 2010, issue 5
P. P. Maksymov
A SUPER-WIDEBAND BASIC ELEMENT FOR LOW-FREQUENCY ANTENNAS OF RADIO TELESCOPES: PART 1. PRINCIPLES OF REALIZATION
Radio Physics and Radio Astronomy, Vol.2, 2011, issue 2
I. N. Zhouck, V. P. Bovkoon, Alexandr A. Konovalenko, A. A. Gridin, I. N. Boobnov