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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Imprimir: 0040-2508
ISSN On-line: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v71.i13.60
pages 1213-1227

ELLIPSOIDAL PROPERTIES OF THE REFLECTION FACTORS FROM A THIN-LAYER PERIODIC SEMICONDUCTOR- DIELECTRIC STRUCTURE IN A MAGNETIC FIELD

A. A. Bulgakov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
I. V. Fedorin
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine; National Technical University "Kharkiv Polytechnical Institute", 21, Frunze Str., 61002, Kharkiv

RESUMO

Electromagnetic wave polarization is analyzed in the case of reflection from a thin-stratified semiconductor-dielectric periodic structure situated on a metal substrate in an external magnetic field. It is shown that the polarization ellipse parameters, specifically, the length and angle of inclination of the ellipse axes with respect to the coordinate frame axes are dependent on the magnetic field strength and frequency and angle of electromagnetic wave incidence. Owing to specific properties of the permittivity tensor of the thin layered structure a number of peculiarities appear in the dependences of the phase difference on the structure parameters. The results obtained with allowance made for losses in the semiconductor material are characterized by smoother dependences and show no sharp changes in the polarization characteristics as the external magnetic field and/or electromagnetic wave frequency are changed


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