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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Publicou 4 edições por ano

ISSN Imprimir: 1093-3611

ISSN On-line: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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AN INFLUENCE OF PLASMA TREATMENT ON STRUCTURE PROPERTIES OF THIN SiC FILMS ON Si

Volume 14, Edição 1-2, 2010, pp. 193-203
DOI: 10.1615/HighTempMatProc.v14.i1-2.170
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RESUMO

In this paper, an influence of processing in hydrogen plasma on a structure of SiC0.7, SiC0.95 and SiC 1.4 layers formed by implantation of carbon ions (40, 20, 10, 5 and 3 keV) into silicon substrate is investigated. The glow discharge hydrogen plasma was generated at a pressure of 6.5 Pa with a capacitive coupled r.f. power (27.12 MHz) of about 20 W. Temperature of processing did not exceed 100°C. It is found that after plasma treatment the surface of SiC0.95 film becomes friable and porous. Annealing at temperature 800°C has led to the formation of granular structure of the surface while the untreated by plasma film at the same temperature shows the surface deformation only. The half-width of Si−C peak of IR transmission spectrum of SiC0.95 layer after processing in hydrogen plasma and annealing at 900°C for 30 min is equal to 78 cm−1 and indicates on the formation of highly qualitative crystalline β−SiC layer, surpassing on quality of structure perfection of an untreated in plasma SiC0.95 layer isochronously annealed at temperatures in an interval 200−1400°C. This effect of low temperature crystallization stimulated in plasma is explained by disintegration of stable carbon- and carbon-silicon clusters under influence of hydrogen plasma.

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