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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v9.i3.50
pages 375-390

HYDROGENATION AND PURIFICATION OF SILICON BY RF PLASMA

Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
A. Soric
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
M. Benmansour
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05
S. Darwiche
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France
E. Francke
Laboratoire de Génie Procédés Plasmas et Traitement de Surface, Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France
M. Nikravech
Laboratoire de Genie des Precedes Plasmas et Traitement de Surfaces, Universite P. et M. Curie, Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75005 Paris, France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
Sergey V. Dresvin
Laboratory of Electrotechnological and Plasma Installation of Polytechnic Institute -SPb State Polytechnical University, 29 Polytechnicheskaya Str., 195251 Saint-Petersburg, Russia

RESUMO

The photovoltaic properties of polycrystalline silicon depend on the crystallinity and the purity of the material. The hydrogenation of silicon leads to a passivation of crystalline defects and active impurities. In this paper, we demonstrate that the chemical properties of the plasma can be controlled in order to purify and introduce hydrogen in silicon in order to produce a material with photovoltaic properties even if the density of dislocations is high. The comparison of two plasma processes shows that the hydrogenation of the silicon in liquid state produces strong bonds between hydrogen and silicon atoms. This is due to the excited state of hydrogen (n=8) generated at a temperature close to 11000 K in the inductive coil area of the RF plasma. Experimental measurements of the plasma properties (electronic density, electronic temperature) are in agreement with the calculations resulting from the modeling.