Publicou 4 edições por ano
ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360
Indexed in
IN SITU LASER ASSISTED DIAGNOSTICS ON GROWTH RATE OF THICK PACVD ORGANOSILICON FILMS
RESUMO
The purpose of the present work is to determine the growth rate of an organosilicon film during the deposition process. The films are obtained from the chemical decomposition of the 1,1,3,3 TetraMethylDiSilOxane (TMDSO) monomer premixed with oxygen by reaction in the far remote afterglow of a nitrogen microwave discharge. The process control, i.e. the knowledge about the relation between film thickness and deposition duration can only be achieved through in situ diagnostics. In this aim, the optical intensity of a laser beam signal after reflection on the substrate is monitored during deposition. The relevance of the analysis method has been tested for thicknesses close to 17 micrometers. The reproducibility of the signal is discussed according to the film properties. A first determination of the surface roughness has been proposed after comparison with theoretical reflectance. The resulting temporal evolution of the signal is compared with the film's thickness determined by profiler measurements for different deposition durations. Linearity of the growth rate deduced from reflected signal with the effective one has been demonstrated.
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Rich Sami Abou, Mille Vianney, Vivien Céline, Godey Sylvie, Supiot Philippe, Kinetics of RPECVD Organosilicon Polymer Post-treatment in a N2 /O2 Microwave Plasma Remote Afterglow, Plasma Processes and Polymers, 7, 9-10, 2010. Crossref
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Szunerits Sabine, Rich Sami Abou, Coffinier Yannick, Languille Marie-Angélique, Supiot Philippe, Boukherroub Rabah, Preparation and characterization of thin organosilicon films deposited on SPR chip, Electrochimica Acta, 53, 11, 2008. Crossref
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Ghali Noureddine, Vivien Céline, Mutel Brigitte, Rives Alain, Multilayer coating by plasma polymerization of TMDSO deposited on carbon steel: Synthesis and characterization, Surface and Coatings Technology, 259, 2014. Crossref