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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

Publicou 4 edições por ano

ISSN Imprimir: 1093-3611

ISSN On-line: 1940-4360

The Impact Factor measures the average number of citations received in a particular year by papers published in the journal during the two preceding years. 2017 Journal Citation Reports (Clarivate Analytics, 2018) IF: 0.4 The Immediacy Index is the average number of times an article is cited in the year it is published. The journal Immediacy Index indicates how quickly articles in a journal are cited. Immediacy Index: 0.1 The Eigenfactor score, developed by Jevin West and Carl Bergstrom at the University of Washington, is a rating of the total importance of a scientific journal. Journals are rated according to the number of incoming citations, with citations from highly ranked journals weighted to make a larger contribution to the eigenfactor than those from poorly ranked journals. Eigenfactor: 0.00005 The Journal Citation Indicator (JCI) is a single measurement of the field-normalized citation impact of journals in the Web of Science Core Collection across disciplines. The key words here are that the metric is normalized and cross-disciplinary. JCI: 0.07 SJR: 0.198 SNIP: 0.48 CiteScore™:: 1.1 H-Index: 20

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IN SITU LASER ASSISTED DIAGNOSTICS ON GROWTH RATE OF THICK PACVD ORGANOSILICON FILMS

Volume 9, Edição 2, 2005, pp. 287-297
DOI: 10.1615/HighTempMatProc.v9.i2.110
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RESUMO

The purpose of the present work is to determine the growth rate of an organosilicon film during the deposition process. The films are obtained from the chemical decomposition of the 1,1,3,3 TetraMethylDiSilOxane (TMDSO) monomer premixed with oxygen by reaction in the far remote afterglow of a nitrogen microwave discharge. The process control, i.e. the knowledge about the relation between film thickness and deposition duration can only be achieved through in situ diagnostics. In this aim, the optical intensity of a laser beam signal after reflection on the substrate is monitored during deposition. The relevance of the analysis method has been tested for thicknesses close to 17 micrometers. The reproducibility of the signal is discussed according to the film properties. A first determination of the surface roughness has been proposed after comparison with theoretical reflectance. The resulting temporal evolution of the signal is compared with the film's thickness determined by profiler measurements for different deposition durations. Linearity of the growth rate deduced from reflected signal with the effective one has been demonstrated.

CITADO POR
  1. Rich Sami Abou, Mille Vianney, Vivien Céline, Godey Sylvie, Supiot Philippe, Kinetics of RPECVD Organosilicon Polymer Post-treatment in a N2 /O2 Microwave Plasma Remote Afterglow, Plasma Processes and Polymers, 7, 9-10, 2010. Crossref

  2. Szunerits Sabine, Rich Sami Abou, Coffinier Yannick, Languille Marie-Angélique, Supiot Philippe, Boukherroub Rabah, Preparation and characterization of thin organosilicon films deposited on SPR chip, Electrochimica Acta, 53, 11, 2008. Crossref

  3. Ghali Noureddine, Vivien Céline, Mutel Brigitte, Rives Alain, Multilayer coating by plasma polymerization of TMDSO deposited on carbon steel: Synthesis and characterization, Surface and Coatings Technology, 259, 2014. Crossref

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