Publicou 4 edições por ano
ISSN Imprimir: 1093-3611
ISSN On-line: 1940-4360
IF:
0.4
Immediacy Index:
0.1
Eigenfactor:
0.00005
JCI:
0.07
SJR:
0.198
SNIP:
0.48
CiteScore™::
1.1
H-Index:
20
Indexed in
EFFICIENCY OF SILICON LASER ABLATION IN AIR ON BICHROMATIC PULSE IRRADIATION
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RESUMO
The work is devoted to elucidating the silicon ablation regularities under bichromatic laser radiation at wavelengths of 532 nm and 1064 nm with a controllable order of laser pulses and time delay between them. A manifold increase in the specific mass removal of silicon has been revealed under irradiation with leading 532 nm nanosecond laser pulses followed by 1064-nm pulses with time delay from 3 to 8 µs.
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Chumakov A. N., Lychkoskyi V. V., SILICON PLASMA HEATING IN AIR AT THE COMBINED BICHROMATIC LASER RADIATION AT WAVELENGTHS OF 355 and 532 nm, Journal of Applied Spectroscopy, 88, 6, 2021. Crossref
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Chumakov A. N., Lychkoskyi V. V., Silicon Plasma Heating in Air under Combined Bichromatic Laser Radiation at Wavelengths of 355 and 532 nm, Journal of Applied Spectroscopy, 88, 6, 2022. Crossref