Publicou 6 edições por ano
ISSN Imprimir: 1543-1649
ISSN On-line: 1940-4352
Indexed in
Toward Multiscale Modeling of Carbon Nanotube Transistors
RESUMO
Multiscale simulation approaches are needed in order to address scientific and technological questions in the rapidly developing field of carbon nanotube electronics. In this paper, we describe an effort underway to develop a comprehensive capability for multiscale simulation of carbon nanotube electronics. We focus in this paper on one element of that hierarchy, the simulation of ballistic CNTFETs by self-consistently solving the Poisson and Schrödinger equations using the nonequilibrium Green's function (NEGF) formalism. The NEGF transport equation is solved at two levels: i) a semiempirical atomistic level using the pz orbitals of carbon atoms as the basis, and ii) an atomistic mode space approach, which only treats a few subbands in the tube's circumferential direction while retaining an atomistic grid along the carrier transport direction. Simulation examples show that these approaches describe quantum transport effects in nanotube transistors. The paper concludes with a brief discussion of how these semiempirical device-level simulations can be connected to ab initio, continuum, and circuit level simulations in the multiscale hierarchy.
-
Yoon Youngki, Guo Jing, Effect of edge roughness in graphene nanoribbon transistors, Applied Physics Letters, 91, 7, 2007. Crossref
-
Betti Alessandro, Fiori Gianluca, Iannaccone Giuseppe, Statistical theory of shot noise in quasi-one-dimensional field-effect transistors in the presence of electron-electron interaction, Physical Review B, 81, 3, 2010. Crossref
-
Alam Khairul, Lake Roger K., Leakage and performance of zero-Schottky-barrier carbon nanotube transistors, Journal of Applied Physics, 98, 6, 2005. Crossref
-
Arefinia Zahra, Orouji Ali A., Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach, Japanese Journal of Applied Physics, 48, 2, 2009. Crossref
-
Guo Jing, A quantum-mechanical treatment of phonon scattering in carbon nanotube transistors, Journal of Applied Physics, 98, 6, 2005. Crossref
-
Ouyang Yijian, Guo Jing, Heat dissipation in carbon nanotube transistors, Applied Physics Letters, 89, 18, 2006. Crossref
-
Guo Jing, Alam Muhammad A., Yoon Youngki, Theoretical investigation on photoconductivity of single intrinsic carbon nanotubes, Applied Physics Letters, 88, 13, 2006. Crossref
-
Zhao Pei, Guo Jing, Modeling edge effects in graphene nanoribbon field-effect transistors with real and mode space methods, Journal of Applied Physics, 105, 3, 2009. Crossref
-
Raychowdhury Arijit, Roy Kaushik, Carbon Nanotube Electronics: Design of High-Performance and Low-Power Digital Circuits, IEEE Transactions on Circuits and Systems I: Regular Papers, 54, 11, 2007. Crossref
-
Koswatta S.O., Hasan S., Lundstrom M.S., Anantram M.P., Nikonov D.E., Nonequilibrium Green's Function Treatment of Phonon Scattering in Carbon-Nanotube Transistors, IEEE Transactions on Electron Devices, 54, 9, 2007. Crossref
-
Hassaninia Iman, Ghayour Rahim, Abiri Habib, Sheikhi Mohammad, Noise analysis of coaxial Schottky barrier carbon nanotube fets using non equilibrium Green’s function formalism, Open Physics, 7, 4, 2009. Crossref
-
Deretzis I., Fiori G., Iannaccone G., La Magna A., Atomistic quantum transport modeling of metal-graphene nanoribbon heterojunctions, Physical Review B, 82, 16, 2010. Crossref
-
Fregonese SÉbastien, Maneux Cristell, Zimmer Thomas, Implementation of Tunneling Phenomena in a CNTFET Compact Model, IEEE Transactions on Electron Devices, 56, 10, 2009. Crossref
-
Zhou Hailiang, Zhang Minxuan, Hao Yue, Performance optimization of MOS-like carbon nanotube-FETs based on electrostatic doping, Journal of Computational Electronics, 9, 2, 2010. Crossref
-
Sarkar Deblina, Krall Michael, Banerjee Kaustav, Electron-hole duality during band-to-band tunneling process in graphene-nanoribbon tunnel-field-effect-transistors, Applied Physics Letters, 97, 26, 2010. Crossref
-
Betti Alessandro, Fiori Gianluca, Iannaccone Giuseppe, Shot Noise Suppression in Quasi-One-Dimensional Field-Effect Transistors, IEEE Transactions on Electron Devices, 56, 9, 2009. Crossref
-
Yamamoto Takahiro, Sasaoka Kenji, Watanabe Satoshi, Universal transition between inductive and capacitive admittance of metallic single-walled carbon nanotubes, Physical Review B, 82, 20, 2010. Crossref
-
Neophytou Neophytos, Ahmed Shaikh, Klimeck Gerhard, Influence of vacancies on metallic nanotube transport properties, Applied Physics Letters, 90, 18, 2007. Crossref
-
Neophytou Neophytos, Kienle Diego, Polizzi Eric, Anantram M. P., Influence of defects on nanotube transistor performance, Applied Physics Letters, 88, 24, 2006. Crossref
-
Guo Jing, Kan Edwin C., Ganguly Udayan, Zhang Yuegang, High sensitivity and nonlinearity of carbon nanotube charge-based sensors, Journal of Applied Physics, 99, 8, 2006. Crossref
-
Ouyang Yijian, Yoon Youngki, Guo Jing, On the current delivery limit of semiconducting carbon nanotubes, Journal of Computer-Aided Materials Design, 14, 1, 2007. Crossref
-
Fregonese SÉbastien, Goguet Johnny, Maneux Cristell, Zimmer Thomas, Implementation of Electron–Phonon Scattering in a CNTFET Compact Model, IEEE Transactions on Electron Devices, 56, 6, 2009. Crossref
-
Guo Jing, Lundstrom Mark, Role of phonon scattering in carbon nanotube field-effect transistors, Applied Physics Letters, 86, 19, 2005. Crossref
-
Arefinia Z., Orouji A.A., Quantum Simulation Study of a New Carbon Nanotube Field-Effect Transistor With Electrically Induced Source/Drain Extension, IEEE Transactions on Device and Materials Reliability, 9, 2, 2009. Crossref
-
Paydavosi N., Holland K.D., Zargham M.M., Vaidyanathan M., Understanding the Frequency- and Time-Dependent Behavior of Ballistic Carbon-Nanotube Transistors, IEEE Transactions on Nanotechnology, 8, 2, 2009. Crossref
-
Pourfath M, Kosina H, The effect of phonon scattering on the switching response of carbon nanotube field-effect transistors, Nanotechnology, 18, 42, 2007. Crossref
-
Koswatta Siyuranga O., Hasan Sayed, Lundstrom Mark S., Anantram M. P., Nikonov Dmitri E., Ballisticity of nanotube field-effect transistors: Role of phonon energy and gate bias, Applied Physics Letters, 89, 2, 2006. Crossref
-
Sasada Keita, Hatano Naomichi, Calculation of the Self-Energy of Open Quantum Systems, Journal of the Physical Society of Japan, 77, 2, 2008. Crossref
-
Koswatta Siyuranga O., Lundstrom Mark S., Anantram M. P., Nikonov Dmitri E., Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors, Applied Physics Letters, 87, 25, 2005. Crossref
-
Pourfath Mahdi, Kosina Hans, Computational study of carbon-based electronics, Journal of Computational Electronics, 8, 3-4, 2009. Crossref
-
Guo Jing, Gunlycke D., White C. T., Field effect on spin-polarized transport in graphene nanoribbons, Applied Physics Letters, 92, 16, 2008. Crossref
-
Ouyang Yijian, Guo Jing, Assessment of carbon nanotube array transistors: A three-dimensional quantum simulation, Solid-State Electronics, 61, 1, 2011. Crossref
-
Deretzis I., La Magna A., Coherent electron transport in quasi one-dimensional carbon-based systems, The European Physical Journal B, 81, 1, 2011. Crossref
-
Sverdlov V., Ungersboeck E., Kosina H., Selberherr S., Current transport models for nanoscale semiconductor devices, Materials Science and Engineering: R: Reports, 58, 6, 2008. Crossref
-
Grassi Roberto, Gnudi Antonio, Gnani Elena, Reggiani Susanna, Baccarani Giorgio, Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs, IEEE Transactions on Nanotechnology, 10, 3, 2011. Crossref
-
Naderi Ali, Keshavarzi Parviz, Orouji Ali A., LDC–CNTFET: A carbon nanotube field effect transistor with linear doping profile channel, Superlattices and Microstructures, 50, 2, 2011. Crossref
-
Fiori G., Iannaccone G., Klimeck G., Coupled Mode Space Approach for the Simulation of Realistic Carbon Nanotube Field-Effect Transistors, IEEE Transactions On Nanotechnology, 6, 4, 2007. Crossref
-
Koswatta Siyuranga O., Koester Steven J., Haensch Wilfried, On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors, IEEE Transactions on Electron Devices, 57, 12, 2010. Crossref
-
Yousefi R., Effect of uniaxial strain on the subthreshold swing of ballistic carbon nanotube FETs, Physica E: Low-dimensional Systems and Nanostructures, 43, 10, 2011. Crossref
-
Yoon Y., Jing Guo , Analysis of Strain Effects in Ballistic Carbon Nanotube FETs, IEEE Transactions on Electron Devices, 54, 6, 2007. Crossref
-
Tao Y., He J., Zhang X., Man T.Y., Chan M., Full-band quantum transport based simulation for carbon nanotube field effect transistor from chirality to device performance, Molecular Simulation, 34, 1, 2008. Crossref
-
Yousefi Reza, Saghafi Kamyar, Moravvej-Farshi Mohammad Kazem, Numerical Study of Lightly Doped Drain and Source Carbon Nanotube Field Effect Transistors, IEEE Transactions on Electron Devices, 57, 4, 2010. Crossref
-
Hirai Daisuke, Konabe Satoru, Periodic oscillation of photocurrents in single-walled carbon nanotubes, Applied Physics Letters, 99, 22, 2011. Crossref
-
Zhou Hailiang, Zhang Minxuan, Hao Yue, Performance Optimization of MOS-Like Carbon Nanotube FETs With Realistic Contacts, IEEE Transactions on Electron Devices, 57, 11, 2010. Crossref
-
Zou Jianping, Zhang Qing, Marzari Nicola, Li Hong, Theoretical study of the performance for short channel carbon nanotube transistors with asymmetric contacts, Physics Letters A, 372, 46, 2008. Crossref
-
Pourfath M., Kosina H., Selberherr S., Numerical study of quantum transport in carbon nanotube transistors, Mathematics and Computers in Simulation, 79, 4, 2008. Crossref
-
Hassaninia Iman, Sheikhi Mohammad Hossein, Kordrostami Zoheir, Simulation of carbon nanotube FETs with linear doping profile near the source and drain contacts, Solid-State Electronics, 52, 6, 2008. Crossref
-
Moghadam Narjes, Moravvej-Farshi Mohammad Kazem, Aziziyan Mohammad Reza, Design and simulation of MOSCNT with band engineered source and drain regions, Microelectronics Reliability, 53, 4, 2013. Crossref
-
Yamacli Serhan, Avci Mutlu, Accurate SPICE compatible CNT interconnect and CNTFET models for circuit design and simulation, Mathematical and Computer Modelling, 58, 1-2, 2013. Crossref
-
Dehdashti Akhavan Nima, Ferain Isabelle, Yu Ran, Razavi Pedram, Colinge Jean-Pierre, Emission and absorption of optical phonons in Multigate Silicon Nanowire MOSFETs, Journal of Computational Electronics, 11, 3, 2012. Crossref
-
Wang Neng-Ping, Xu Xiao-Jun, Effects of defects near source or drain contacts of carbon nanotube transistors, EPL (Europhysics Letters), 100, 4, 2012. Crossref
-
Hayati Mohsen, Rezaei Abbas, Seifi Majid, CNT-MOSFET modeling based on artificial neural network: Application to simulation of nanoscale circuits, Solid-State Electronics, 54, 1, 2010. Crossref
-
Arefinia Zahra, Orouji Ali A., Novel attributes in the performance and scaling effects of carbon nanotube field-effect transistors with halo doping, Superlattices and Microstructures, 45, 6, 2009. Crossref
-
Arefinia Zahra, Investigation of the performance and band-to-band tunneling effect of a new double-halo-doping carbon nanotube field-effect transistor, Physica E: Low-dimensional Systems and Nanostructures, 41, 10, 2009. Crossref
-
Hassani nia Iman, Sheikhi Mohammad Hossein, Effect of strain on the performance of MOSFET-like and p–i–n carbon nanotube FETs, Solid-State Electronics, 53, 5, 2009. Crossref
-
Hai-liang Zhou, Min-xuan Zhang, Yue Hao, Performance optimization of conventional MOS-like carbon nanotube FETs with realistic contacts based on stair-case doping strategy, Solid-State Electronics, 54, 12, 2010. Crossref
-
Xia T.-S., Register L.F., Banerjee S.K., Simulation study of the carbon nanotube field effect transistors beyond the complex band structure effect, Solid-State Electronics, 49, 5, 2005. Crossref
-
Yamamoto Takahiro, Sasaoka Kenji, Watanabe Satoshi, AC Power Consumption of Single-Walled Carbon Nanotube Interconnects: Non-Equilibrium Green's Function Simulation, Japanese Journal of Applied Physics, 51, 2012. Crossref
-
Moslemi Mohammad Reza, Sheikhi Mohammad Hossein, Saghafi Kamyar, Moravvej-Farshi Mohammad Kazem, Electronic properties of a dual-gated GNR-FET under uniaxial tensile strain, Microelectronics Reliability, 52, 11, 2012. Crossref
-
Ravaioli Umberto, , 71, 2007. Crossref
-
KORDROSTAMI ZOHEIR, SHEIKHI M. HOSSEIN, ZARIFKAR ABBAS, DESIGN DEPENDENT CUTOFF FREQUENCY OF NANOTRANSISTORS NEAR THE ULTIMATE PERFORMANCE LIMIT, International Journal of Modern Physics B, 26, 32, 2012. Crossref
-
Nguyen V Hung, Mazzamuto F, Bournel A, Dollfus P, Resonant tunnelling diodes based on graphene/h-BN heterostructure, Journal of Physics D: Applied Physics, 45, 32, 2012. Crossref
-
Akhavan Nima Dehdashti, Jolley Gregory, Umana-Membreno Gilberto A., Antoszewski Jarek, Faraone Lorenzo, Phonon limited transport in graphene nanoribbon field effect transistors using full three dimensional quantum mechanical simulation, Journal of Applied Physics, 112, 9, 2012. Crossref
-
Aziziyan M. R., Ahmadi V., Moghadam N., A quantum model for light emission performance of carbon nanotube field effect transistor, Applied Physics Letters, 100, 5, 2012. Crossref
-
Sudheer Nune V., Chakravorty Anjan, Regional approach to model charges and capacitances of intrinsic carbon nanotube field effect transistors, Journal of Computational Electronics, 11, 2, 2012. Crossref
-
Shirazi Shaahin G., Mirzakuchaki Sattar, Dependence of carbon nanotube field effect transistors performance on doping level of channel at different diameters: On/off current ratio, Applied Physics Letters, 99, 26, 2011. Crossref
-
Moghadam Narjes, Aziziyan Mohammad Reza, Fathi Davood, Design and simulation of double-lightly doped MOSCNT using non-equilibrium Green’s function, Applied Physics A, 108, 3, 2012. Crossref
-
Arefinia Zahra, Orouji Ali A., Impact of single halo implantation on the carbon nanotube field-effect transistor: A quantum simulation study, Physica E: Low-dimensional Systems and Nanostructures, 41, 2, 2008. Crossref
-
Naderi Ali, Keshavarzi Parviz, The effects of source/drain and gate overlap on the performance of carbon nanotube field effect transistors, Superlattices and Microstructures, 52, 5, 2012. Crossref
-
Faizabadi Edris, Kargar Zeinab, Thickness effects on the quantum conductance of single wall carbon nanotube junctions, Diamond and Related Materials, 31, 2013. Crossref
-
Orouji Ali A., Arefinia Zahra, Detailed simulation study of a dual material gate carbon nanotube field-effect transistor, Physica E: Low-dimensional Systems and Nanostructures, 41, 4, 2009. Crossref
-
Shirazi Shaahin G., Mirzakuchaki Sattar, High on/off current ratio in ballistic CNTFETs based on tuning the gate insulator parameters for different ambient temperatures, Applied Physics A, 113, 2, 2013. Crossref
-
Wang Neng-Ping, Xu Xiao-Jun, Channel-length scaling for effects of single defects in carbon nanotube transistors, Journal of Applied Physics, 114, 7, 2013. Crossref
-
Yousefi R., Shabani M., Arjmandi M., Ghoreishi S.S., A computational study on electrical characteristics of a novel band-to-band tunneling graphene nanoribbon FET, Superlattices and Microstructures, 60, 2013. Crossref
-
Hung Nguyen Viet, Saint-Martin Jérôme, Querlioz Damien, Mazzamuto Fulvio, Bournel Arnaud, Niquet Yann-Michel, Dollfus Philippe, Bandgap nanoengineering of graphene tunnel diodes and tunnel transistors to control the negative differential resistance, Journal of Computational Electronics, 12, 2, 2013. Crossref
-
Yamamoto Takahiro, Sasaoka Kenji, Watanabe Satoshi, AC Power Consumption of Single-Walled Carbon Nanotube Interconnects: Non-Equilibrium Green's Function Simulation, Japanese Journal of Applied Physics, 51, 4R, 2012. Crossref
-
Shirazi Shaahin G., Mirzakuchaki Sattar, Performance dependency on doping level of carbon nanotube for ballistic CNTFETs, EPL (Europhysics Letters), 103, 6, 2013. Crossref
-
Takada Yukihiro, Yamamoto Takahiro, Wave-Packet Dynamics Simulation on Electronic Transport in Carbon Nanotubes with Randomly Distributed Impurities, Japanese Journal of Applied Physics, 52, 6S, 2013. Crossref
-
Yu Wen-Juan, Wang Neng-Ping, Effects of a single defect in composite gate insulators of carbon nanotube transistors, The European Physical Journal B, 87, 10, 2014. Crossref
-
Khoeini Farhad, Analytical study of electronic quantum transport in carbon-based nanomaterials, Diamond and Related Materials, 47, 2014. Crossref
-
Naderi Ali, Numerical study of carbon nanotube field effect transistors in presence of carbon–carbon third nearest neighbor interactions, International Journal of Modern Physics B, 28, 24, 2014. Crossref
-
JAMALABADI ZAHRA, KESHAVARZI PARVIZ, NADERI ALI, SDC-CNTFET: STEPWISE DOPING CHANNEL DESIGN IN CARBON NANOTUBE FIELD EFFECT TRANSISTORS FOR IMPROVING SHORT CHANNEL EFFECTS IMMUNITY, International Journal of Modern Physics B, 28, 07, 2014. Crossref
-
Chanana Anuja, Sengupta Amretashis, Mahapatra Santanu, Performance analysis of boron nitride embedded armchair graphene nanoribbon metal–oxide–semiconductor field effect transistor with Stone Wales defects, Journal of Applied Physics, 115, 3, 2014. Crossref
-
Majumdar Kausik, Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution, Journal of Applied Physics, 115, 17, 2014. Crossref
-
Hejazifar Mohammad Javad, Sedigh Ziabari Seyed Ali, Investigation of the cutoff frequency of double linear halo lightly doped drain and source CNTFET, International Nano Letters, 4, 3, 2014. Crossref
-
Pourfath M., Yazdanpanah A., Fathipour M., Kosina H., On the role of line-edge roughness on the diffusion and localization in GNRs, 2010 14th International Workshop on Computational Electronics, 2010. Crossref
-
Holland K., Paydavosi N., Vaidyanathan M., Self-consistent simulation of array-based CNFETs: Impact of tube pitch on RF performance, 2010 14th International Workshop on Computational Electronics, 2010. Crossref
-
Alarcon Alfonso, Nguyen Viet-Hung, Berrada Salim, Querlioz Damien, Saint-Martin Jérôme, Bournel Arnaud, Dollfus Philippe, Pseudosaturation and Negative Differential Conductance in Graphene Field-Effect Transistors, IEEE Transactions on Electron Devices, 60, 3, 2013. Crossref
-
Shirazi Shaahin G., Mirzakuchaki Sattar, The impact of gate insulator dielectric constant on performance of CNTFETs at different ambient temperatures, The 4th IEEE International NanoElectronics Conference, 2011. Crossref
-
Betti A., Fiori G., Iannaccone G., Shot noise in quasi one-dimensional FETs, 2008 IEEE International Electron Devices Meeting, 2008. Crossref
-
Cummings Aron W., Varennes Julien, Leonard Francois, Electrical Contacts to Three-Dimensional Arrays of Carbon Nanotubes, IEEE Transactions on Nanotechnology, 12, 6, 2013. Crossref
-
Paydavosi Navid, Alam Ahsan Ul, Ahmed Sabbir, Holland Kyle David, Rebstock Joseph P., Vaidyanathan Mani, RF Performance Potential of Array-Based Carbon-Nanotube Transistors—Part I: Intrinsic Results, IEEE Transactions on Electron Devices, 58, 7, 2011. Crossref
-
Abo-Elhadeed Ahmed F., Modeling carbon nanotube transistors using neural networks approach, 2012 International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (SMACD), 2012. Crossref
-
Koswatta S.O., Neophytou N., Kienle D., Fiori G., Lundstrom M.S., Dependence of DC characteristics of CNT MOSFETs on bandstructure models, IEEE Transactions On Nanotechnology, 5, 4, 2006. Crossref
-
Ahmed Zubair, Chan Mansun, Reduction of ambipolarity in carbon nanotube field-effect transistor by non-uniform source/ drain doping and increased extension length, 2012 IEEE International Conference on Electron Devices and Solid State Circuit (EDSSC), 2012. Crossref
-
Pourfath M., Kosina H., Selberherr S., Reduction of the dark-current in carbon nanotube photo-detectors, ESSDERC 2008 - 38th European Solid-State Device Research Conference, 2008. Crossref
-
Guo J., Hasan S., Javey A., Bosman G., Lundstrom M., Assessment of High-Frequency Performance Potential of Carbon Nanotube Transistors, IEEE Transactions On Nanotechnology, 4, 6, 2005. Crossref
-
Ahmed Sheikh, Shawkat Mashiyat, Chowdhury Md. Iramul, Mominuzzaman Sharif, Gate dielectric material dependence of current‐voltage characteristics of ballistic Schottky barrier graphene nanoribbon field‐effect transistor and carbon nanotube field‐effect transistor for different channel lengths, Micro & Nano Letters, 10, 10, 2015. Crossref
-
Lundstrom M., Klimeck G., The NCN: Science, Simulation, and Cyber Services, 2006 IEEE Conference on Emerging Technologies - Nanoelectronics, 2006. Crossref
-
Khoeini Farhad, Combined effect of oriented strain and external magnetic field on electrical properties of superlattice-graphene nanoribbons, Journal of Physics D: Applied Physics, 48, 40, 2015. Crossref
-
Huang Jun Zh., Yin Wen-Yan, Modeling and Performance Characterization of Double-Walled Carbon Nanotube Array Field-Effect Transistors, IEEE Transactions on Electron Devices, 58, 1, 2011. Crossref
-
Karbassian Farshid, Moradinasab Mahdi, Fathipour Morteza, Numerical study of scaling issues of C-CNTFETs, 2009 1st Asia Symposium on Quality Electronic Design, 2009. Crossref
-
Keshavarzi A., Raychowdhury A., Kurtin J., Roy K., De V., Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—Transient Analysis, Parasitics, and Scalability, IEEE Transactions on Electron Devices, 53, 11, 2006. Crossref
-
Raychowdhury A., Keshavarzi A., Kurtin J., De V., Roy K., Carbon Nanotube Field-Effect Transistors for High-Performance Digital Circuits—DC Analysis and Modeling Toward Optimum Transistor Structure, IEEE Transactions on Electron Devices, 53, 11, 2006. Crossref
-
Huang Jun Z., Zhang Lining, Chew Weng Cho, Yam Chi-Yung, Jiang Li Jun, Chen Guan-Hua, Chan Mansun, Model Order Reduction for Quantum Transport Simulation of Band-To-Band Tunneling Devices, IEEE Transactions on Electron Devices, 61, 2, 2014. Crossref
-
Huang Jun Z., Chew Weng Cho, Peng Jie, Yam Chi-Yung, Jiang Li Jun, Chen Guan-Hua, Model Order Reduction for Multiband Quantum Transport Simulations and its Application to p-Type Junctionless Transistors, IEEE Transactions on Electron Devices, 60, 7, 2013. Crossref
-
Koswatta S.O., Nikonov D.E., Lundstrom M.S., Computational study of carbon nanotube p-i-n tunnel FETs, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005. Crossref
-
Kordrostami Z., Sheikhi M. H., Zarifkar A., Influence of Channel and Underlap Engineering on the High-Frequency and Switching Performance of CNTFETs, IEEE Transactions on Nanotechnology, 11, 3, 2012. Crossref
-
Raychowdhury Arijit, Fong Xuanyao, Chen Qikai, Roy Kaushik, Analysis of super cut-off transistors for ultralow power digital logic circuits, Proceedings of the 2006 international symposium on Low power electronics and design - ISLPED '06, 2006. Crossref
-
Lundstrom Mark, Nanotransistors: A Bottom-Up View, 2006 European Solid-State Device Research Conference, 2006. Crossref
-
Ahmed Zubair, Chan Mansun, Strain modeling in source exhaustion regime of Carbon nanotube field effect transistor, 2013 IEEE International Conference of Electron Devices and Solid-state Circuits, 2013. Crossref
-
Iannaccone Giuseppe, Betti Alessandro, Fiori Gianluca, Suppressed and enhanced shot noise in one dimensional field-effect transistors, Journal of Computational Electronics, 14, 1, 2015. Crossref
-
Ahmed Zubair, Sarfraz Khawar, Lining Zhang , Chan Mansun, Low voltage SRAM design using tunneling regime of CNTFET, 14th IEEE International Conference on Nanotechnology, 2014. Crossref
-
Keshavarzi Ali, Raychowdhury Arijit, Kurtin Juanita, Roy Kaushik, De Vivek, Scalability of Carbon Nanotube FET-based Circuits, 2006 IEEE Asian Solid-State Circuits Conference, 2006. Crossref
-
Shaker Ahmed, Ossaimee Mahmoud, Zekry A., Abouelatta Mohamed, Influence of gate overlap engineering on ambipolar and high frequency characteristics of tunnel-CNTFET, Superlattices and Microstructures, 86, 2015. Crossref
-
Zhao Pei, Zhang Qin, Jena Debdeep, Koswatta Siyuranga O., Influence of Metal–Graphene Contact on the Operation and Scalability of Graphene Field-Effect Transistors, IEEE Transactions on Electron Devices, 58, 9, 2011. Crossref
-
Zhidong Chen , Ming Zhang , Ximeng Guan , Jinyu Zhang , Ghiping Yu , Real- and mode-space simulation of electron transport in metallic carbon nanotubes using NEGF, 2008 2nd IEEE International Nanoelectronics Conference, 2008. Crossref
-
Grassi Roberto, Gnudi Antonio, Gnani Elena, Reggiani Susanna, Baccarani Giorgio, Mode Space Approach for Tight-Binding Transport Simulation in Graphene Nanoribbon FETs, 2009 13th International Workshop on Computational Electronics, 2009. Crossref
-
Pourfath Mahdi, Selberherr Siegfried, Current transport in carbon nanotube transistors, 2008 7th International Caribbean Conference on Devices, Circuits and Systems, 2008. Crossref
-
Raychowdhury A., Roy K., Using Super Cut-off Carbon Nanotube Sleep Transistors in Silicon Based Low Power Digital Circuits, 2006 Sixth IEEE Conference on Nanotechnology, 2006. Crossref
-
Pourfath M., Sverdlov V., Selberherr S., Modeling demands for nanoscale devices, 68th Device Research Conference, 2010. Crossref
-
Naderi Ali, Tahne Behrooz Abdi, Review—Methods in Improving the Performance of Carbon Nanotube Field Effect Transistors, ECS Journal of Solid State Science and Technology, 5, 12, 2016. Crossref
-
Zhou Hailiang, Tang Xiantuo, Zhang Minxuan, Hao Yue, Sub-threshold Performance Driven Choice in Tunneling CNFETs, in Computer Engineering and Technology, 666, 2016. Crossref
-
Barbastegan Saber, Shahhoseini Ali, Performance analysis of junctionless carbon nanotube field effect transistors using NEGF formalism, Modern Physics Letters B, 30, 10, 2016. Crossref
-
Pourian Parisa, Yousefi Reza, Ghoreishi Seyed Saleh, Effect of uniaxial strain on electrical properties of CNT-based junctionless field-effect transistor: Numerical study, Superlattices and Microstructures, 93, 2016. Crossref
-
Ossaimee Mahmoud, El Sabbagh Mona, Gamal Salah, Temperature dependence of carrier transport and electrical characteristics of Schottky‐barrier carbon nanotube field effect transistors, Micro & Nano Letters, 11, 2, 2016. Crossref
-
Wang Wei, Sun Yuan, Wang Huan, Xu Hongsong, Xu Min, Jiang Sitao, Yue Gongshu, Investigation of light doping and hetero gate dielectric carbon nanotube tunneling field-effect transistor for improved device and circuit-level performance, Semiconductor Science and Technology, 31, 3, 2016. Crossref
-
Djamil Rechem, Aicha Khial, Cherifa Azizi, Djeffal Fayçal, Impacts of high-k gate dielectrics and low temperature on the performance of nanoscale CNTFETs, Journal of Computational Electronics, 15, 4, 2016. Crossref
-
Dokania Vishesh, Islam Aminul, Dixit Vivek, Tiwari Shree Prakash, Analytical Modeling of Wrap-Gate Carbon Nanotube FET With Parasitic Capacitances and Density of States, IEEE Transactions on Electron Devices, 63, 8, 2016. Crossref
-
Saha Atanu K., Saha Gobinda, Rashid ABM Harun-ur, Graphene Nanoribbon Quantum-Well Interband and Intersubband Photodetector, IEEE Transactions on Electron Devices, 62, 12, 2015. Crossref
-
Yousefi Reza, Doorzad Leila, Hetero-junction carbon nanotube FET with lightly doped drain and source regions, International Journal of Modern Physics B, 30, 04, 2016. Crossref
-
Shah Khurshed A., Parvaiz M. Shunaid, Negative differential resistance in BN co-doped coaxial carbon nanotube field effect transistor, Superlattices and Microstructures, 100, 2016. Crossref
-
Zeydi Maryam Mirasanloo, Yousefi Reza, A modified structure for MOSFET-like carbon nanotube FET, Applied Physics A, 122, 4, 2016. Crossref
-
LaGasse Samuel W., Cress Cory D., Hughes Harold L., Lee Ji Ung, Atomistic Modeling of Suspended Carbon Nanotube Field Effect Transistors Under Proton Radiation, IEEE Transactions on Nuclear Science, 62, 6, 2015. Crossref
-
Pivezhandi Mohammad, Abedi Kambiz, Hassanzadeh Alireza, Accuracy improvement with reliable statistical-based models for CNT-FET applications, Journal of Computational Electronics, 16, 3, 2017. Crossref
-
Molaei Imen Abadi Rouzbeh, Sedigh Ziabari Seyed Ali, A Comparative Numerical Study of Junctionless and p-i-n Tunneling Carbon Nanotube Field Effect Transistor, Journal of Nano Research, 45, 2017. Crossref
-
Behrooz Milad, Monshipouri Mahta, Abdi Yaser, Modelling the effects of hydrogen passivation and strain on the field emission from armchair-graphene nanoribbon using a modified non-equilibrium Green’s function method, Molecular Simulation, 43, 12, 2017. Crossref
-
Sengupta Amretashis, On the junction physics of Schottky contact of (10, 10) MX2 (MoS2, WS2) nanotube and (10, 10) carbon nanotube (CNT): an atomistic study, Applied Physics A, 123, 4, 2017. Crossref
-
Ambrogio Stefano, Magyari-Köpe Blanka, Onofrio Nicolas, Mahbubul Islam Md, Duncan Dan, Nishi Yoshio, Strachan Alejandro, Modeling resistive switching materials and devices across scales, Journal of Electroceramics, 39, 1-4, 2017. Crossref
-
Ghoreishi Seyed Saleh, Yousefi Reza, Taghavi Neda, Performance Evaluation and Design Considerations of Electrically Activated Drain Extension Tunneling GNRFET: A Quantum Simulation Study, Journal of Electronic Materials, 46, 11, 2017. Crossref
-
Bueno Paulo R., Miranda David A., Conceptual density functional theory for electron transfer and transport in mesoscopic systems, Phys. Chem. Chem. Phys., 19, 8, 2017. Crossref
-
Ghoreishi Seyed Saleh, Yousefi Reza, A computational study of a novel graphene nanoribbon field effect transistor, International Journal of Modern Physics B, 31, 09, 2017. Crossref
-
Huang Jun Z., Long Pengyu, Povolotskyi Michael, Ilatikhameneh Hesameddin, Ameen Tarek A., Rahman Rajib, Rodwell Mark J. W., Klimeck Gerhard, A Multiscale Modeling of Triple-Heterojunction Tunneling FETs, IEEE Transactions on Electron Devices, 64, 6, 2017. Crossref
-
Shaker Ahmed, Ossaimee Mahmoud, Current oscillations in Schottky-barrier CNTFET: towards resonant tunneling device operation, Semiconductor Science and Technology, 33, 3, 2018. Crossref
-
Naderi Ali, Ahmadmiri Seyed Abolfazl, Attributes in the Performance and Design Considerations of Asymmetric Drain and Source Regions in Carbon Nanotube Field Effect Transistors: Quantum Simulation Study, ECS Journal of Solid State Science and Technology, 5, 7, 2016. Crossref
-
Singh Tapender, Sastri O. S. K. S., Rai Padmnabh, Gate field controlled and temperature dependent quantum transport in (10,0) carbon nanotube field effect transistor, AIP Advances, 8, 11, 2018. Crossref
-
Salem Nada, Ossaimee Mahmoud, Shaker Ahmed, Abouelatta Mohamed, Electrical Characteristics of T-CNTFET: Partially-Gated Channel vs Doping Engineering, ECS Journal of Solid State Science and Technology, 7, 3, 2018. Crossref
-
Huang Jun Z., Ilatikhameneh Hesameddin, Povolotskyi Michael, Klimeck Gerhard, Robust mode space approach for atomistic modeling of realistically large nanowire transistors, Journal of Applied Physics, 123, 4, 2018. Crossref
-
Tamersit Khalil, Djeffal Fayçal, Boosting the performance of a nanoscale graphene nanoribbon field-effect transistor using graded gate engineering, Journal of Computational Electronics, 17, 3, 2018. Crossref
-
Marconcini Paolo, Cresti Alessandro, Roche Stephan, Effect of the Channel Length on the Transport Characteristics of Transistors Based on Boron-Doped Graphene Ribbons, Materials, 11, 5, 2018. Crossref
-
Tamersit Khalil, Improving the performance of a junctionless carbon nanotube field-effect transistor using a split-gate, AEU - International Journal of Electronics and Communications, 115, 2020. Crossref
-
Moghaddam Soheila, Ghoreishi Seyed Saleh, Yousefi Reza, Aderang Habib, Quantum simulation of a junctionless carbon nanotube field-effect transistor under torsional strain, Superlattices and Microstructures, 138, 2020. Crossref
-
Hirsbrunner Mark R, Philip Timothy M, Basa Bora, Kim Youngseok, Jip Park Moon, Gilbert Matthew J, A review of modeling interacting transient phenomena with non-equilibrium Green functions, Reports on Progress in Physics, 82, 4, 2019. Crossref
-
Naderi Ali, Keshavarzi Parviz, Novel carbon nanotube field effect transistor with graded double halo channel, Superlattices and Microstructures, 51, 5, 2012. Crossref
-
Guo Jing, Datta Supriyo, Anantram M. P., Lundstrom Mark, Atomistic Simulation of Carbon Nanotube Field-Effect Transistors Using Non-Equilibrium Green’s Function Formalism, Journal of Computational Electronics, 3, 3-4, 2004. Crossref
-
Hasan Sayed, Guo Jing, Vaidyanathan Mani, Alam M. A., Lundstrom Mark, Monte Carlo Simulation of Carbon Nanotube Devices, Journal of Computational Electronics, 3, 3-4, 2004. Crossref
-
Tamersit Khalil, Djeffal Fayçal, A computationally efficient hybrid approach based on artificial neural networks and the wavelet transform for quantum simulations of graphene nanoribbon FETs, Journal of Computational Electronics, 18, 3, 2019. Crossref
-
Venkatesan R., Daniel R. Joseph, Shanmugaraja P., Simulation studies on effect of CNT physical parameters on carbon nanotube thin-film transistors (CN-TFTS), ISSS Journal of Micro and Smart Systems, 8, 2, 2019. Crossref
-
Tamersit Khalil, Quantum simulation of a junctionless carbon nanotube field-effect transistor with binary metal alloy gate electrode, Superlattices and Microstructures, 128, 2019. Crossref
-
Tamersit Khalil, Djeffal Faycal, Fast and Accurate Simulation of Ultrascaled Carbon Nanotube Field-Effect Transistor Using ANN Sub-Modeling Technique, 2019 IEEE International Conference on Design & Test of Integrated Micro & Nano-Systems (DTS), 2019. Crossref
-
Tamersit Khalil, Djeffal Faycal, Carbon Nanotube Field-Effect Transistor With Vacuum Gate Dielectric for Label-Free Detection of DNA Molecules: A Computational Investigation, IEEE Sensors Journal, 19, 20, 2019. Crossref
-
Tamersit Khalil, A computational study of short-channel effects in double-gate junctionless graphene nanoribbon field-effect transistors, Journal of Computational Electronics, 18, 4, 2019. Crossref
-
Pourfath Mahdi, Implementation, in The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation, 2014. Crossref
-
Pourfath Mahdi, Introduction, in The Non-Equilibrium Green's Function Method for Nanoscale Device Simulation, 2014. Crossref
-
Pouillon Y., Pérez Paz A., Mäklin J., Halonen N., Leroy Y., Mowbray D., García Lastra J.M., Tóth G., Kordás K., Kónya Z., Kukovecz Á., Rubio A., Gas Sensing and Thermal Transport Through Carbon-Nanotube-Based Nanodevices, in Design and Applications of Nanomaterials for Sensors, 16, 2014. Crossref
-
Tamersit Khalil, Boosting the performance of an ultrascaled carbon nanotube junctionless tunnel field-effect transistor using an ungated region: NEGF simulation, Journal of Computational Electronics, 18, 4, 2019. Crossref
-
Singh Tapender, Rai Padmnabh, Model for electroluminescence in single-walled carbon nanotube field effect transistor under transverse magnetic field, Materials Research Express, 6, 11, 2019. Crossref
-
Guo Jing, Lundstrom Mark, Device Simulation of SWNT-FETs, in Carbon Nanotube Electronics, 2009. Crossref
-
Philip Wong H.-S., Lin Albert, Deng Jie, Hazeghi Arash, Krishnamohan Tejas, Wan Gordon, Carbon Nanotube Device Modeling and Circuit Simulation, in Carbon Nanotube Electronics, 2009. Crossref
-
Samadi Hadi, Shahhoseini Ali, Aghaei-liavali Faramarz, A new method on designing and simulating CNTFET_based ternary gates and arithmetic circuits, Microelectronics Journal, 63, 2017. Crossref
-
Salah Ahmed, Ossaimee Mahmoud, Shaker Ahmed, Impact of high-doped pockets on the performance of tunneling CNTFET, Superlattices and Microstructures, 145, 2020. Crossref
-
Ebrahimi Mahsa, Horri Ashkan, Sanaeepur Majid, Tavakoli Mohammad Bagher, A comparative computational study of tunneling transistors based on vertical graphene–hBCN heterostructures, Journal of Applied Physics, 127, 8, 2020. Crossref
-
Tamersit Khalil, Improved performance of nanoscale junctionless carbon nanotube tunneling FETs using dual-material source gate design: A quantum simulation study, AEU - International Journal of Electronics and Communications, 127, 2020. Crossref
-
Tamersit Khalil, Sub-10 nm junctionless carbon nanotube field-effect transistors with improved performance, AEU - International Journal of Electronics and Communications, 124, 2020. Crossref
-
Sahu Uttam Kumar, Kumar Saha Ajoy, Gupta Partha Sarathi, Rahaman Hafizur, Valley Resolved Current Components Analysis of Monolayer TMDFETs, 2020 International Symposium on Devices, Circuits and Systems (ISDCS), 2020. Crossref
-
Tamersit Khalil, Jooq Mohammad Khaleqi Qaleh, Moaiyeri Mohammad Hossein, Computational Investigation of Negative Capacitance Coaxially Gated Carbon Nanotube Field-Effect Transistors, IEEE Transactions on Electron Devices, 68, 1, 2021. Crossref
-
Marki R., Zaabat M., Effect of different parameters on the carrier mobility in NWTFET, Semiconductor Physics, Quantum Electronics and Optoelectronics, 23, 2, 2020. Crossref
-
Di Vito A., Pecchia A., Di Carlo A., Auf der Maur M., Simulating random alloy effects in III-nitride light emitting diodes, Journal of Applied Physics, 128, 4, 2020. Crossref
-
Tamersit Khalil, A novel band-to-band tunneling junctionless carbon nanotube field-effect transistor with lightly doped pocket: Proposal, assessment, and quantum transport analysis, Physica E: Low-dimensional Systems and Nanostructures, 128, 2021. Crossref
-
Tamersit Khalil, Role of Underlap Structure in Boosting the Performance of Band-to-Band Tunneling Carbon Nanotube FET with 5-nm Gate Length, 2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST), 2021. Crossref
-
Cummings Aron W., Léonard François, Enhanced Performance of Short-Channel Carbon Nanotube Field-Effect Transistors Due to Gate-Modulated Electrical Contacts, ACS Nano, 6, 5, 2012. Crossref
-
Salah Ahmed, Shaker Ahmed, Ossaimee Mahmoud, Dielectric modulated CNT TFET based label-free biosensor: design and performance analysis, Semiconductor Science and Technology, 36, 9, 2021. Crossref
-
Tahaei Seyyedeh Hoda, Ghoreishi Seyed Saleh, Yousefi Reza, Aderang Habib, A computational study of a carbon nanotube junctionless tunneling field-effect transistor (CNT-JLTFET) based on the charge plasma concept, Superlattices and Microstructures, 125, 2019. Crossref
-
Tamersit Khalil, Junctionless Carbon Nanotube Field-Effect Transistors as Gas Nanosensors for Low-Power Environment Monitoring Applications, 2021 10th International Conference on Modern Circuits and Systems Technologies (MOCAST), 2021. Crossref
-
Salah Ahmed, Shaker Ahmed, El-Banna Mohamed, Ossaimee Mahmoud, Impact of source doping profile on the performance of CNT TFETs and MOSFETs: design aspects for fabrication tolerance, Semiconductor Science and Technology, 36, 7, 2021. Crossref
-
Marconcini Paolo, Cresti Alessandro, Triozon François, Fiori Gianluca, Biel Blanca, Niquet Yann-Michel, Macucci Massimo, Roche Stephan, Atomistic Boron-Doped Graphene Field-Effect Transistors: A Route toward Unipolar Characteristics, ACS Nano, 6, 9, 2012. Crossref
-
Tamersit Khalil, Improving the On-Current of Junctionless Carbon Nanotube Tunneling FETs Using a Heavily n-Type Doped Pocket, 2021 International Semiconductor Conference (CAS), 2021. Crossref
-
Horri Ashkan, Faez Rahim, Full-Quantum Simulation of Graphene Self-Switching Diodes, Chinese Physics Letters, 36, 6, 2019. Crossref
-
Ossaimee M., Salem N., Abouelatta M., Shaker A., Enhancement of Tunneling CNTFET Performance Using a High-k Dielectric Pocket, ECS Journal of Solid State Science and Technology, 9, 10, 2020. Crossref
-
Tamersit Khalil, Performance Assessment of a New Radiation Dosimeter Based on Carbon Nanotube Field-Effect Transistor: A Quantum Simulation Study, IEEE Sensors Journal, 19, 9, 2019. Crossref
-
Iannaccone G., Fiori G., Reggiani S., Pala M., Beyond CMOS, in Nanoscale CMOS, 2013. Crossref
-
Mahdi Muntasir, Hossain Md Anik, Hussain Sazzad, Hasan Mehedi, Zaman Hasan U, Saha Jibesh Kanti, Effect of doping profile variation on nanoscale cylindrical gate carbon nanotube field-effect transistor: a computational study using nonequilibrium Green’s function formalism, Semiconductor Science and Technology, 36, 1, 2021. Crossref
-
Ghodrati Maryam, Mir Ali, Improving the Performance of a Doping-Less Carbon Nanotube FET with Dual Junction Source and Drain Regions: Numerical Studies, Journal of Circuits, Systems and Computers, 31, 10, 2022. Crossref
-
Tamersit Khalil, Improved Switching Performance of Nanoscale p-i-n Carbon Nanotube Tunneling Field-Effect Transistors Using Metal-Ferroelectric-Metal Gating Approach, ECS Journal of Solid State Science and Technology, 10, 3, 2021. Crossref
-
Ossaimee Mahmoud, Salah Ahmed, Gamal Salah H., Shaker Ahmed, Salem M.S., Enhancement of device characteristics of CNT-TFET: Role of electrostatic doping and work function engineering, Ain Shams Engineering Journal, 2022. Crossref
-
Banerjee Lopamudra, Sengupta Amretashis, Rahaman Hafizur, Carrier Transport and Thermoelectric Properties of Differently Shaped Germanene (Ge) and Silicene (Si) Nanoribbon Interconnects, IEEE Transactions on Electron Devices, 66, 1, 2019. Crossref
-
Tamersit Khalil, Computational Study of p-n Carbon Nanotube Tunnel Field-Effect Transistor, IEEE Transactions on Electron Devices, 67, 2, 2020. Crossref
-
Ghoreishi Seyed Saleh, Vadizadeh Mahdi, Yousefi Reza, Afzalian Amard, Low-Power Ultradeep-Submicrometer Junctionless Carbon Nanotube Field-Effect Diode, IEEE Transactions on Electron Devices, 69, 1, 2022. Crossref
-
Anvarifard Mohammad K., Ramezani Zeinab, Sadegh Amiri Iraj, Graphene Nanoribbon FET Compact Model on the Basis of ANN Configuration Applicable in Different Spice Levels, ECS Journal of Solid State Science and Technology, 10, 3, 2021. Crossref
-
Tamersit Khalil, Madan Jaya, Kouzou Abdellah, Pandey Rahul, Kennel Ralph, Abdelrahem Mohamed, Role of Junctionless Mode in Improving the Photosensitivity of Sub-10 nm Carbon Nanotube/Nanoribbon Field-Effect Phototransistors: Quantum Simulation, Performance Assessment, and Comparison, Nanomaterials, 12, 10, 2022. Crossref
-
Neophytou Neophytos, Ahmed Shaikh, Klimeck Gerhard, Non-equilibrium Green’s function (NEGF) simulation of metallic carbon nanotubes including vacancy defects, Journal of Computational Electronics, 6, 1-3, 2007. Crossref
-
Mahdi Muntasir, Hossain Md. Anik, Saha Jibesh Kanti, Performance Analysis of an Empirical Model of Carbon Nanotube Field Effect Transistor, 2018 International Conference on Innovation in Engineering and Technology (ICIET), 2018. Crossref
-
Tamersit Khalil, Energy-Efficient Carbon Nanotube Field-Effect Phototransistors: Quantum Simulation, Device Physics, and Photosensitivity Analysis, IEEE Sensors Journal, 22, 1, 2022. Crossref
-
Tamersit Khalil, Kouzou Abdellah, Bourouba Hocine, Kennel Ralph, Abdelrahem Mohamed, Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance, Nanomaterials, 12, 3, 2022. Crossref
-
Tamersit Khalil, Jooq Mohammad Khaleqi Qaleh, Moaiyeri Mohammad Hossein, Analog/RF performance assessment of ferroelectric junctionless carbon nanotube FETs: A quantum simulation study, Physica E: Low-dimensional Systems and Nanostructures, 134, 2021. Crossref
-
Tamersit Khalil, Moaiyeri Mohammad Hossein, Jooq Mohammad Khaleqi Qaleh, Leveraging negative capacitance ferroelectric materials for performance boosting of sub-10 nm graphene nanoribbon field-effect transistors: a quantum simulation study, Nanotechnology, 33, 46, 2022. Crossref
-
Horri Ashkan, Faez Rahim, Analysis and simulation of asymmetrical nanoscale self-switching transistor, International Journal of Modelling and Simulation, 42, 5, 2022. Crossref
-
Shin Mincheol, Quantum Simulations of Ballistic Nanowire Field Effect Transistors, in Encyclopedia of Complexity and Systems Science, 2009. Crossref
-
Tamersit Khalil, Bourouba Hocine, Kouzou Abdellah, Improving the Current Ratio and Ambipolar Behavior of Junctionless CNTFETs Using Graded Metal Gate Work Function: A Quantum Simulation, 2022 19th International Multi-Conference on Systems, Signals & Devices (SSD), 2022. Crossref