RT Journal Article
ID 32b701bd2c7b00bc
A1 Andreev, Dmitrii V.
A1 Bondarenko, Gennady G.
A1 Andreev, Vladimir V.
A1 Maslovsky, Vladimir M.
A1 Stolyarov, Alexander A.
T1 INFLUENCE OF TEMPERATURE ON HIGH-FIELD INJECTION MODIFICATION OF MIS STRUCTURES WITH THERMAL SiO2 FILMS DOPED WITH PHOSPHORUS
JF High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
JO HTM
YR 2019
FD 2020-01-24
VO 23
IS 4
SP 303
OP 312
K1 MIS structure
K1 thin films
K1 high fields
K1 modification of gate dielectric
K1 silicone dioxide
K1 phosphosilicate glass
AB The paper presents a study of the processes of electron trapping in metal-insulator-semiconductor (MIS) structures with gate dielectric based on silicone dioxide doped with phosphorus under high-field Fowler−Nordheim tunnel injection of electrons in a range of temperatures from 293 to 373 K. We have ascertained that the negative charge being trapped in phosphosilicate glass (PSG) consisted of two components with a different energy of the thermal ionization ΔEa1 = 0.2-0.3 eV and ΔEa2 = 1.0-1.2 eV. A part of the charge with a low energy of the thermal ionization virtually drain off at annealing temperature of 473 K for a period of time of 20 min and then the dielectric contains only the thermostable part of the negative charge that can be utilized to correct the threshold voltage of MIS transistors. We have ascertained that an implementation of the high-field tunnel injection of electrons for MIS structures with SO2-PSG gate dielectric has raised not only density of negative charge trapped but also its thermostable component.
PB Begell House
LK https://www.dl.begellhouse.com/journals/57d172397126f956,3b44d7b209668af9,32b701bd2c7b00bc.html