%0 Journal Article %A Storozhenko, I. P. %D 2014 %I Begell House %K Gunn diode, graded-gap semiconductor, nitride semiconductor, intervalley electron transfer, resonance frequency %N 13 %P 1201-1207 %R 10.1615/TelecomRadEng.v73.i13.60 %T RESONANCE FREQUENCIES OF GUNN DIODES BASED ON NITRIDE GRADED−GAP SEMICONDUCTORS %U https://www.dl.begellhouse.com/journals/0632a9d54950b268,6b541fef7dc47de0,4574d37b4231fbe2.html %V 73 %X A domain drift and current oscillations have been studied in devices based on the graded-gap semiconductors. It is shown that the use of graded-gap semiconductors can increase the operating frequency band of the Gunn diodes. A survey of properties of A3B5 semiconductors of the kind is presented. %8 2014-08-07