RT Journal Article ID 5ad94f9e4ecf8abf A1 Makhniy, Victor P. A1 Slyotov, M. M. A1 Slyotov, A. M. T1 PHYSICAL PROPERTIES OF CdSe HETEROLAYERS WITH ISOVALENT TELLYRIUM IMPURITY JF Telecommunications and Radio Engineering JO TRE YR 2013 FD 2013-04-15 VO 72 IS 8 SP 741 OP 744 K1 cadmium selenide K1 cadmium tellurium K1 zinc K1 isovalent substitution K1 diffusion K1 point defects K1 luminescence K1 recombination AB Properties of solenide cadmium heterolayers obtained by the method of isovalent substitution on monocrystalline substrates of CdTe and ZnSe have been investigated. The energy gap width determined from the reflection spectrum is ~2.0 eV and corresponds to the CdSe cubic modification. Analysis of electric and luminescent characteristics was performed with taking into account the mechanisms of intrinsic point defect generation caused by the presence of Te and Zn impurities in the layers under study. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,46516d1c09baadcd,5ad94f9e4ecf8abf.html