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MODELLING ON THERMO-SOLUTAL CONVECTIVE FLOW DURING DIRECTIONAL SOLIDIFICATION OF A SEMICONDUCTOR

DOI: 10.1615/ICHMT.2008.CHT.2060
17 pages

Farid Mechighel
Laboratoire Sciences des Procédés Céramiques et de Traitements de Surface, SPCTS UMR CNRS 6638, ENSCI, France; and Département de Génie Mécanique, Université de Constantine, Algérie

Bernard Pateyron
Laboratoire SPCTS UMR CNRS 7315, ENSCI, Centre Europeen de la Ceramique, Limoges, France

Resumo

In the present paper a problem on combined thermo-solutal buoyancy forces driven flow in Pb-10wt%Sn semiconductor system filled in a rectangular enclosure has been investigated by numerical simulation. Continuum model for solidification modeling is used.
Generated flow under thermal and solutal buoyancy forces is laminar but could be, under an increase in the thermal gradient, turbulent or transition to turbulent in nature.
External forces such Lorentz force (due to applied magnetic field) are recommended for controlling and stabilizing the flow.
Knowledge of interaction among these forces is important to study the effect of flow on heat rate related to the melt.

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