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3-D Atomistic Investigation of silicon MOSFETs

DOI: 10.1615/ICHMT.2017.CHT-7.1490
pages 1385-1401

Zahra Shomali
Mechanical Engineering Department, Amirkabir University of Technology 424 Hafez Avenue, P.O. Box 15875-4413, Tehran, Iran

Jafar Ghazanfarian
Mechanical Engineering Department, Faculty of Engineering, University of Zanjan, Zanjan, Iran

Abbas Abbassi
Department of Mechanical Engineering, Amirkabir University of Technology (Tehran Polytechnic), 424 Hafez Ave., P.O. Box 15875-4413, Tehran, Iran


The precise study of three-dimensional silicon transistors due to the significant role of these Nano-devices in Nano-electronics technology is necessary subject of research. In this study, the non-Fourier nature of the heat transfer and the actual three-dimensional structure of the MOSFET, have been considered. To the best of our knowledge, there have been no studies implying the mentioned conditions by using the atomistic method. Here, the Monte-Carlo method is used for solving the Boltzmann equation and the actual three-dimensional silicon transistor is accurately simulated. The written code is applied to simulate the 3-D MOSFET with various boundary conditions. A hot spot is formed. Also, the temperature jump. The temperature jump appears due to the change of the type of the dominant heat carriers from acoustic phonons to the optical ones. As the heat source is turned off at t=500 ps, the temperature experiences many fluctuation until the usual descending behavior appears at t=726 ps. Such deportment occurs due to the imprisoning the existent heat in the hot-spot between the isolated boundaries. In brief, this work fulfills the lack of heat transfer data in 3-D MOSFETs.

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