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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009

Выпуски:
Том 78, 2019 Том 77, 2018 Том 76, 2017 Том 75, 2016 Том 74, 2015 Том 73, 2014 Том 72, 2013 Том 71, 2012 Том 70, 2011 Том 69, 2010 Том 68, 2009 Том 67, 2008 Том 66, 2007 Том 65, 2006 Том 64, 2005 Том 63, 2005 Том 62, 2004 Том 61, 2004 Том 60, 2003 Том 59, 2003 Том 58, 2002 Том 57, 2002 Том 56, 2001 Том 55, 2001 Том 54, 2000 Том 53, 1999 Том 52, 1998 Том 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v63.i10.40
pages 883-889

On the Influence of Ions on the Static Potential Distribution in O-Type Devices with the Long-Time Interaction

G. A. Alexeev
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine

Краткое описание

The influence of ions of residual gas on the static potential distribution in the transverse section of the plane-parallel channel with a strip electron beam has been studied. Peculiarities of formation of the natural ion trap have been investigated depending on the parameter of the electronic charge compensation, the temperature of ionic gas, the coefficient of the channel filling by an electron beam, and the asymmetry coefficient of its arrangement. The results can be used at the design of O-type devices with the long-time interaction.


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