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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009

Выпуски:
Том 78, 2019 Том 77, 2018 Том 76, 2017 Том 75, 2016 Том 74, 2015 Том 73, 2014 Том 72, 2013 Том 71, 2012 Том 70, 2011 Том 69, 2010 Том 68, 2009 Том 67, 2008 Том 66, 2007 Том 65, 2006 Том 64, 2005 Том 63, 2005 Том 62, 2004 Том 61, 2004 Том 60, 2003 Том 59, 2003 Том 58, 2002 Том 57, 2002 Том 56, 2001 Том 55, 2001 Том 54, 2000 Том 53, 1999 Том 52, 1998 Том 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v75.i15.50
pages 1369-1376

IMPROVEMENT IN OPTICAL BAND GAP DETERMINATION FOR CADMIUM TELLURIDE AND RELATED COMPOUNDS

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
Yu. V. Vorobiev
Centro de Investigaciony de Estudios Avanzados del IPW (CINVESTAN) Queretaro, Ubraimento Norponiente 2000, Fracc. Real de Iuriquilla, 76230 Queretaro, Mexico
V.M. Sklarchuk
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky str., Chernivtsi, 58012, Ukraine
J. Gonzalez-Hernandez
CIDESI, Av. Playa Pie de la Cuesta No. 702. Desarrollo San Pablo, 76130 Queretaro, QRO, Mexico

Краткое описание

We propose a refined methodology for high-precision determination of band gap value for semiconductor crystals basing on the analysis of their transmission, absorption and reflection spectra. These experimental data also provide information on the character of optical transitions in the material under consideration. The efficient use of the proposed methodology is illustrated for the bulk CdTe and Cd1-xZnxTe samples

Ключевые слова: diode, band gap, intrinsic conductivity, optical method

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