Nanocrystalline Silicon Based Heterostructure Converters

V. M. Koval; A. N. Shmyryova

doi:10.1615/TelecomRadEng.v66.i13.50

Telecommunications and Radio Engineering

Главный редактор: Yevgeni Koucheryavy (open in a new tab)

Ассоциированный редакторs: Ammar Muthanna (open in a new tab) Edison Pignaton de Freitas (open in a new tab)

Выходит 12 номеров в год

ISSN Печать: 0040-2508

ISSN Онлайн: 1943-6009

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Nanocrystalline Silicon Based Heterostructure Converters

Том 66, Выпуск 13, 2007, pp. 1187-1196

DOI: 10.1615/TelecomRadEng.v66.i13.50

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V. M. Koval
National Technological University of Ukraine - KPI, Kiev, Ukraine

A. N. Shmyryova
National Technological University of Ukraine - KPI, Kiev, Ukraine

Краткое описание

A new photo sensitivity semiconductor material and a heterostructure converter on its basis characterized with increased photo sensitivity in visible and ultraviolet bands of the spectrum, are created. The influence of deposition parameters, chemical composition and the conditions for subsequent re-crystallization of nanocrystalline silicon thin films upon the sensitivity of heterostructures are determined.

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