Выходит 12 номеров в год
ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009
Indexed in
Modeling the Internal Amplification of Current Pulses in Reverse-Biased PNIPN Semiconducting Structures
Краткое описание
The modified counter-sweep method has been used to solve the finite-difference equations of the drift-diffusion model of reverse-biased pnipn structures with abrupt p-n junctions. Calculated results are presented concerning the electric field in the pnipn structure and the currents through its i domain. As has been shown, with some values of the physical parameters the reverse-biased pnipn structure is characterized by a sufficient amount of positive feedback on the drift current to condition a nonlinear state of self-induced current oscillations. Owing to this effect, the reverse-biased pnipn structures seem to be prospective for the design of various semiconducting devices, like, e.g. avalanche photo-multipliers, high-frequency thyristors or chaotic oscillation generators.