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ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009
Indexed in
GENERATION AND FREQUENCY MULTIPLICATION BY GaAs-DIODES WITH TUNNEL BOUNDARIES
Краткое описание
Volt-ampere characteristics and efficiency of tunnel-boundary GaAs diodes with sandwich structures is stidied. The generation efficiency at the fundamental and harmonic frequencies is analyzed in dependence on the resistance between contacts of the diode structure and on the resistance connected in series with the tunnel boundaries. The upper boundary of the operation frequency range of the tunnel-boundary diodes is estimated. It is shown that the tunnel-boundary diodes can be used for harmonic generation and frequency multiplication within the frequency range tens to hundreds of gigahertz.
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Prokhorov E. D., Botsula O. V., Reutina O. A., Impedance of planar diode with a resonant-tunnel border, 2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, 2013. Crossref
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Prokhorov E. D., Botsula O. V., Reutina O. A., Influence of lateral borders length on current voltage characteristics and oscillation efficiency of planar diode, 2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, 2013. Crossref
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On increasing power of short InGaPAs graded-gap Gunn diodes, Visnyk of V.N. Karazin Kharkiv National University, series “Radio Physics and Electronics”, 31, 2019. Crossref
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Botsula O.V., Prykhodko K. H., Zozulia V. O., Monte Carlo Modeling of the Diodes with Lateral Resonant Tunneling Border, 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2018. Crossref
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Storozhenko Ihor, Kaydash Marina, Yaroshenko Oleksandr, Arkusha Yuri, Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As, 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS), 2018. Crossref
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Storozhenko Ihor, Kaydash Maryna, Yaroshenko Oleksandr, The Study of Harmonic-Mode Operation of Transfer Electron Devices on Based Graded-Gap Semiconductors, 2018 IEEE 17th International Conference on Mathematical Methods in Electromagnetic Theory (MMET), 2018. Crossref