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Портал Begell Электронная Бибилиотека e-Книги Журналы Справочники и Сборники статей Коллекции
Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009

Выпуски:
Том 78, 2019 Том 77, 2018 Том 76, 2017 Том 75, 2016 Том 74, 2015 Том 73, 2014 Том 72, 2013 Том 71, 2012 Том 70, 2011 Том 69, 2010 Том 68, 2009 Том 67, 2008 Том 66, 2007 Том 65, 2006 Том 64, 2005 Том 63, 2005 Том 62, 2004 Том 61, 2004 Том 60, 2003 Том 59, 2003 Том 58, 2002 Том 57, 2002 Том 56, 2001 Том 55, 2001 Том 54, 2000 Том 53, 1999 Том 52, 1998 Том 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v71.i15.50
pages 1381-1385

UV PHOTOELECTRIC DETECTOR WITH INCORPORATED INTERNAL GAIN

Victor P. Makhniy
Yuri Fedkovych Chernivtsi National University, 2 Kotsyubynsky St., Chernivtsi, 58012, Ukraine
V. V. Melnyk
Yuriy Fedkovych Chernivtsi National University, Kotsubinsky Str., 2, Chernivtsi, 58012, Ukraine
V. D. Ryzhikov
STC for Radiation Instruments of STC "Institute for Single Crystals", Kharkov; Institute for Scintillation Materials of NAS of Ukraine, Kharkiv; NSC "Institute of Metrology", Kharkiv, Ukraine State Customs Service of Ukraine, Kyiv, Ukraine
S.N. Galkin
Institute for scintillation materials NAS of Ukraine, 60 Lenin Ave, Kharkiv, 61001, Ukraine
G. M. Onishchenko
Institute for Scientillation Materials, Science Technology Center "Institute for Single Crystals", National Academy of Science of Ukraine, Kharkiv; V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

Краткое описание

The authors consider the relation between the forward bias effect at the integral and spectral characteristics of photocurrent of heterojunction SnO2−ZnSe. It was revealed that the internal gain factor within the spectral range of 200−520 nanometer at the voltage of 1.5 V varies in the range of 103−104, and the monochrome current sensitivity reaches about 100 A/W.

ЛИТЕРАТУРА

  1. Anisimova, I.D., Vikulin, I.M., Zaitov, F.A., and Kurmashev, Sh.D., Semiconductor photoreceivers: ultraviolet, visible and near-field infrared spectrum ranges.

  2. Blank, T.V. and Goldberg, Yu.A., Semiconductor photo-sensitive converters for ultraviolet spectral range.

  3. Makhniy, V.P. and Melnik, V.V., Photovoltaic properties of Ni–ZnSe contacts.

  4. Rozenfeld, A.B., Ryzhikov, V.D., Onyshenko, G.M., Galkin, S.M. at al., Small-size UV radiometer on the basis of Schottky diodes.

  5. Ryzhikov, V.D., Scintillation crystals of semiconductor junctions &#1040;<sup>II</sup> &#1042;<sup>VI</sup>. Technology, properties, application.

  6. Makhniy, V.P., Physical processes in diode structures based on wide-band-gap semiconductors &#1040;<sup>2</sup>&#1042;<sup>6</sup>.

  7. Batavin, V.V., Kontsevoy, Yu.A., and Fedorovich, Yu.V., Measuring of parameters of semiconductor materials and structures.

  8. Rhoderick, E.H. and Williams, R.H., Metal-Semiconductor Contacts.

  9. Lampert, M.A. and Mark, P., Current Injection in Solids.


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