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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009

Выпуски:
Том 78, 2019 Том 77, 2018 Том 76, 2017 Том 75, 2016 Том 74, 2015 Том 73, 2014 Том 72, 2013 Том 71, 2012 Том 70, 2011 Том 69, 2010 Том 68, 2009 Том 67, 2008 Том 66, 2007 Том 65, 2006 Том 64, 2005 Том 63, 2005 Том 62, 2004 Том 61, 2004 Том 60, 2003 Том 59, 2003 Том 58, 2002 Том 57, 2002 Том 56, 2001 Том 55, 2001 Том 54, 2000 Том 53, 1999 Том 52, 1998 Том 51, 1997

Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v57.i8-9.120
6 pages

Boundary Estimation of Ballistic Transport in the GaAs Devices with Submicron Dimensions

S. A. Zuev
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
V. V. Starostenko
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine
A. A. Shadrin
Tavriya National University, 4, Vernadskogo ave., Simpheropol, 95007, Ukraine

Краткое описание

The dominating mechanisms of dissipation in a semiconductor structure based on GaAs have been considered. Time dependences of the free path velocity for the different parameters of the material and the results of estimation of the optimal velocity and the maximal length in which electrons move in the ballistic regime are represented.


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