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Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v57.i1.100
6 pages

Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths

O. V. Botsula
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61022, Ukraine
V. V. Medvedev
V. Karazin National University of Kharkov, 4, Svoboda Sq., Kharkov, 61077, Ukraine
E. D. Prokhorov
V. Karazin National University of Kharkiv, 4, Svoboda Sq., Kharkiv, 61077, Ukraine

Краткое описание

Discussed in the paper is frequency multiplication in resonance-tunnel diodes with a variety of current-voltage characteristics. Single-level resonance-tunneling diodes like Al0.2 Ga0.8As/GaAs, In0.53Ga0.47As / AlAs, InAs / AlAs / GaSb and the two-level AlAs / GaAs are considered. As has been found, the highest frequency conversion factors at all harmonics are shown by the two-level resonance-tunneling diode, with or without bias voltage, compared with the single level resonance-tunneling diodes. The high frequency conversion factor for the harmonic components enables obtaining power levels at the harmonics comparable to those of Gunn generators and avalanche-transit time diodes at millimeter wavelengths.


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