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Telecommunications and Radio Engineering
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ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009

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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v72.i16.60
pages 1509-1519

COHERENT POWER COMBINING IN AVALANCHE-OSCILLATOR DIODES

K. A. Lukin
A.Ya. Usikov Institute for Radiophysics and Electronics of the National Academy of Sciences of Ukraine 12, Academician Proskura St., Kharkiv 61085, Ukraine
P. P. Maksymov
O.Ya. Usikov Institute for Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12 Academician Proskura St., Kharkiv 61085, Ukraine

Краткое описание

The basic problem of modern semiconductor microelectronics is to increase the energy characteristics of oscillators and to increase the frequency range of their operation. Traditionally the power gain of oscillators based on avalanche transit-time diodes, is achieved by addition of the power of several diodes connected into one and the same resonance circuit (power combining). In this research the energy characteristic improvement is reached in the avalanche oscillator diodes operating in the mode of coherent self-oscillations. In this mode the self-oscillations of electron-and hole components of the useful power density occur at the same frequency that provides their coherent composition in the depleted layer of a Si p–n-junction. The calculation of parameters and simulation of avalanche oscillator diode operation in the mode of two-frequency coherent self-oscillations were carried out by the well-tried numerical simulation methods for solving equations of a drift-diffusion model of semiconductors.
The energy and spectral characteristics of avalanche oscillator diodes are calculated. The frequency, useful power and electronic efficiency as a function of impurity concentrations and reverse bias voltage are studied. Research results are of interest for the designer of high-power oscillators operating in the millimeter and submillimeter wave ranges.


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