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Портал Begell Электронная Бибилиотека e-Книги Журналы Справочники и Сборники статей Коллекции
Telecommunications and Radio Engineering
SJR: 0.202 SNIP: 0.2 CiteScore™: 0.23

ISSN Печать: 0040-2508
ISSN Онлайн: 1943-6009

Выпуски:
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Telecommunications and Radio Engineering

DOI: 10.1615/TelecomRadEng.v66.i7.50
pages 619-627

Gunn Diode Power Combining in Open Resonator with Microstrip Array

A. V. Arkhipov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura St., Kharkov 61085, Ukraine
Oleg I. Belous
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura Str., Kharkiv 61085, Ukraine
I. I. Reznik
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura Str., Kharkiv 61085, Ukraine
D. G. Seleznyov
A. Usikov Institute of Radio Physics and Electronics, National Academy of Sciences of Ukraine, 12, Academician Proskura Str., Kharkiv 61085, Ukraine

Краткое описание

Millimeter-wave band Gunn diodes power combiner is experimentally tested. The oscillation system is represented by a semi-spherical open resonator (OR) with a four-element microstrip array (MSA) positioned on a plane mirror. An active element is installed under each of the radiators of the grating. Comparison of the spectral characteristics and amplitude distribution of the fields in the semi-spherical OR and the resonator with MSA is provided. The dependences of the output power versus the distance between the mirrors are investigated for one, two, three and four diodes. Promise of application of a multi-element MSA in the OR for creation of the power combiners of the semiconductor elements is demonstrated.