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Портал Begell Электронная Бибилиотека e-Книги Журналы Справочники и Сборники статей Коллекции
Nanoscience and Technology: An International Journal
ESCI SJR: 0.228 SNIP: 0.484 CiteScore™: 0.37

ISSN Печать: 2572-4258
ISSN Онлайн: 2572-4266

Nanoscience and Technology: An International Journal

Ранее издавался как Nanomechanics Science and Technology: An International Journal

DOI: 10.1615/NanomechanicsSciTechnolIntJ.v2.i1.50
pages 61-69

GROWTH OF NANOCRYSTALLYTES IN A Ge-Se AMORPHOUS THIN FILM

E. V. Aleksandrovich
Institute of Applied Mechanics, Ural Branch of the Russian Academy of Sciences, Izhevsk, Russian Federation
E. V. Stepanova
Izhevsk State Technical University, Izhevsk, Russian Federation
A. V. Vakhrushev
Institute of Mechanics, Ural Branch of the Russian Academy of Sciences, Izhevsk, Russia; Kalashnikov Izhevsk State Technical University, Izhevsk, Russia

Краткое описание

The X-ray analysis was conducted for studying thin-film samples with a thickness from 10 nm to 200 nm, prepared from Ge10Se90 glass under nonequilibrium conditions on glass substrates. The films had an amorphous matrix containing Se, Ge, and GeSe2 nanocrystallites. With an increase in film thicknesses the average crystallite sizes increased from 20 nm to 40 nm and the crystallinity of films varied nonlinearly in the range of (0−100)%. The mechanism was offered for growth of nanocrystallites in the Ge-Se amorphous matrix. It was assumed that on the surface of all the condensed films depending on their thickness, a Ge amorphous thin film or a GeSe4 film was formed, which was crystallized in low-temperature annealing.


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