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Портал Begell Электронная Бибилиотека e-Книги Журналы Справочники и Сборники статей Коллекции
Journal of Porous Media
Импакт фактор: 1.49 5-летний Импакт фактор: 1.159 SJR: 0.43 SNIP: 0.671 CiteScore™: 1.58

ISSN Печать: 1091-028X
ISSN Онлайн: 1934-0508

Выпуски:
Том 22, 2019 Том 21, 2018 Том 20, 2017 Том 19, 2016 Том 18, 2015 Том 17, 2014 Том 16, 2013 Том 15, 2012 Том 14, 2011 Том 13, 2010 Том 12, 2009 Том 11, 2008 Том 10, 2007 Том 9, 2006 Том 8, 2005 Том 7, 2004 Том 6, 2003 Том 5, 2002 Том 4, 2001 Том 3, 2000 Том 2, 1999 Том 1, 1998

Journal of Porous Media

DOI: 10.1615/JPorMedia.v13.i6.50
pages 557-563

AN EFFICIENT AND RELIABLE TWO-DIMENSIONAL PATTERNING OF POROUS SILICON

Hassan Hajghassem
Electrical Engineering Department, Shahid Beheshti University, Tehran, Iran
A. Erfanian
Electrical Engineering Department, K. N. Toosi University, Tehran, Iran
M. Mohtashamifar
Electronic Research Center, Tehran, Iran
M. Aliahmadi
Electronic Research Center, Tehran, Iran
S. Morteza Alehashemi
Electronic Research Center, Tehran, Iran
S. Maryam Banihashemian
Islamic Azad University, Qom Branch, Qom, Iran

Краткое описание

An efficient and reliable method for patterning a two-dimensional porous Si (PS) is presented in this work. The Cr/Au (50/200 nm) layer is used as a mask for electrochemical prosification of Si to form a two-dimensional pattern of porous Si. Quality of the formed 8 × 8 pads of porous Si is analyzed using statistical image analysis, an atomic force microscope, a scanning electron microscope, and also images from an optical microscope. It is shown that a combination of photoresist patterning and Cr/Au deposition can be used to generate arrays of silicon nanoporous in selected surface regions. Our results indicate that using the Cr/Au layer as a mask during prosification of Si results in sharper patterns with higher resolution in comparison to conventionally used photoresist masks such as Shipley and SU8 photoresists. The sharpness of the formed patterns is also investigated by calculating the correlation coefficient using image processing of the formed pattern with the ideal pattern. The correlation coefficient of the patterns made by the Cr/Au mask is 0.99 and the maximum deviation of the formed pattern from the original Cr/Au pattern is 3.44 μm, which shows an almost perfect correlation of the generated array with the ideal pattern.

Ключевые слова: Si, two-dimensional PS arrays, Cr/Au patterning mask

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