An Official Journal of the American Society of Thermal and Fluids Engineers

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HIGH TEMPERATURE ELECTRODEPOSITION OF ZnSe

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ZnSe is a good candidate both for photovoltaic applications and laser technology because of its large band gap. High temperature electrodeposition was chosen to prepare thin layers of ZnSe on substrates made of a glass plate covered with tin oxyde, using the simultaneous reduction of Zn(II) and Se(IV) ions in the molten CaCl₂-NaCl mixture at 550°C.
The first step of this study concerns the electrochemical behavior of the different Zn(II) and Se(IV) starting compounds involved in the process as well as SnO₂. A thermodynamical diagram was established indicating the stability ranges of these species depending on potential and melt acidity.
Deposits were successfully obtained using a potentiostatic method at several potential values. Transparent, yellow, adherent and homogeneous films were prepared with a thickness equal to 3.5 micrometer. The atomic composition measured by X-Ray fluorescence analysis gives a ratio Se/Zn equal to 1.06 and the X-Ray diagrams show the peaks characteristic of the two different phases of ZnSe (hexagonal and cubic) and of CaCl₂. The width of these peaks is characteristic of very good crystallinity of the electrodeposited films showing that post heat treatment is not required.