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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
Том 23, 2019 Том 22, 2018 Том 21, 2017 Том 20, 2016 Том 19, 2015 Том 18, 2014 Том 17, 2013 Том 16, 2012 Том 15, 2011 Том 14, 2010 Том 13, 2009 Том 12, 2008 Том 11, 2007 Том 10, 2006 Том 9, 2005 Том 8, 2004 Том 7, 2003 Том 6, 2002 Том 5, 2001 Том 4, 2000 Том 3, 1999 Том 2, 1998 Том 1, 1997

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2016016073
pages 121-139

PROPERTIES OF A POLY(ETHYLENE TEREPHTHALATE) TRACK MEMBRANE WITH A POLYMER LAYER OBTAINED BY ELECTRON BEAM DISPERSION OF POLYTETRAFLUOROETHYLENE IN VACUUM

Liubov I. Kravets
Joint Institute for Nuclear Research, Flerov Laboratory of Nuclear Reactions, 6 Joliot-Curie Str., Dubna, Moscow Region, 141980, Russia
Alla B. Gilman
Enikolopov Institute of Synthetic Polymer Materials, Russian Academy of Sciences, 70 Profsoyuznaya Str., Moscow, 117393, Russia
Mikhail Yu. Yablokov
Enikolopov Institute of Synthetic Polymer Materials, Russian Academy of Sciences, 70 Profsoyuznaya Str., Moscow, 117393, Russia
Alexander N. Shchegolikhin
Emanuel Institute of Biochemical Physics, Russian Academy of Sciences, 4 Kossygin Str., Moscow, 119334, Russia
Bogdana Mitu
National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., 077125 Bucharest, Romania
Gheorghe Dinescu
National Institute for Laser, Plasma and Radiation Physics, 409 Atomistilor Str., 077125 Bucharest, Romania

Краткое описание

The charge transport properties of a poly(ethylene terephthalate) track membrane with a polymer layer obtained by electron beam dispersion of polytetrafluoroethylene in vacuum have been studied. It was found that polymer deposition on the surface of a track membrane results in the creation of composite membranes that possess an asymmetry of conductivity in electrolyte solutions − a rectification effect similar to that of the p−n junction in semiconductors. It is caused by the essential decrease in the pore diameter and change in the geometry of pores in the deposited layer as well as by the presence of an interface in the pores between the initial membrane and the deposited polymer layer with different wettabilities.


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