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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
Том 23, 2019 Том 22, 2018 Том 21, 2017 Том 20, 2016 Том 19, 2015 Том 18, 2014 Том 17, 2013 Том 16, 2012 Том 15, 2011 Том 14, 2010 Том 13, 2009 Том 12, 2008 Том 11, 2007 Том 10, 2006 Том 9, 2005 Том 8, 2004 Том 7, 2003 Том 6, 2002 Том 5, 2001 Том 4, 2000 Том 3, 1999 Том 2, 1998 Том 1, 1997

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v9.i1.90
pages 103-108

Plasma sprayed ceramics for low macroscopic field emitters

R. Tomaszek
Ecole Nationale Supérieure de Chimie de Lille, BP 108, 8, av. Mendeleïev, 59650 Villeneuve d'Ascq, France; and Faculty of Microsystems Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego, 11/17, 50370 Wroclaw, Poland
Z. Znamirowski
Faculty of Microsystems Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego, 11/17, 50370 Wroclaw, Poland
L. Pawlowski
Ecole Nationale Supérieure de Chimie de Lille, BP 108, 8, av. Mendeleïev, 59650 Villeneuve d'Ascq, France
J. Grimblot
Ecole Nationale Supérieure de Chimie de Lille, BP 108, 8, av. Mendeleïev, 59650 Villeneuve d'Ascq, France
J. Zdanowski
Faculty of Microsystems Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego, 11/17, 50370 Wroclaw, Poland
W. Czarczynski
Faculty of Microsystems Electronics and Photonics, Wroclaw University of Technology, ul. Janiszewskiego, 11/17, 50370 Wroclaw, Poland

Краткое описание

Plasma sprayed coatings have been investigated as field emission cathodes. The tested materials were Al2O3+13%TiO2, Al2O3+40%TiO2, TiO2. Some of these coatings were laser engraved. The samples used were initially prepared for purposes other than field emission and their components and structures were not optimised for electron emission. The emission properties were evaluated from current-voltage characteristics taken in a diode configuration in a vacuum chamber under a pressure of 1×10−6 Pa. Preliminary results indicate that some layers are good field emitters (threshold field 1×10−7 V/m for Al2O3+13%TiO2). The emission stability was generally good and the emission curves were similar on repetition. No significant hysteresis in I-V plots for "up-and-down" measurements was noticed. A model of possible mechanism of low microscopic field emission is presented and microstructural investigations using techniques of XRD, Raman spectroscopy and SEM techniques of plasma sprayed and laser engraved layers enabled understanding of increase of field enhancement factor.


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