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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
Том 23, 2019 Том 22, 2018 Том 21, 2017 Том 20, 2016 Том 19, 2015 Том 18, 2014 Том 17, 2013 Том 16, 2012 Том 15, 2011 Том 14, 2010 Том 13, 2009 Том 12, 2008 Том 11, 2007 Том 10, 2006 Том 9, 2005 Том 8, 2004 Том 7, 2003 Том 6, 2002 Том 5, 2001 Том 4, 2000 Том 3, 1999 Том 2, 1998 Том 1, 1997

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2019029959
pages 57-70

HIGH-RATE HIGH-DENSITY ICP ETCHING OF GERMANIUM

P. B. Lagov
Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology "MISiS" (NUST "MISiS"), Moscow, 119049, Russia; Laboratory of Radiation Technologies, A.N. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences (IPCE RAS), Moscow, 119071, Russia
Vladimir M. Maslovsky
Department of Micro- and Nanoelectronics, Moscow Institute of Physics and Technology (State University), 9 Institutskii Lane, Dolgoprudnyi, Moscow Region, 141700 Russia
Yu. S. Pavlov
Laboratory of Radiation Technologies, A.N. Frumkin Institute of Physical Chemistry and Electrochemistry, Russian Academy of Sciences (IPCE RAS), Moscow, 119071, Russia
E. S. Rogovsky
Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology "MISiS" (NUST "MISiS"), Moscow, 119049, Russia
A. S. Drenin
Department of Semiconductor Electronics and Semiconductor Physics, National University of Science and Technology "MISiS" (NUST "MISiS"), Moscow, 119049, Russia
Vitalii A. Bondariev
Department of Electrical Devices and High Voltage Technology, Lublin University of Technology, 38D Nadbystrzycka Str., Lublin, 20–618, Poland

Краткое описание

Inductively coupled Ar/SF6 plasma (ICP) etching p-type germanium (Ge) substrate used for a multifunction solar cell (MJ SC) was investigated at different ICP power levels and SF6 flow rates at a constant working pressure of 7 Pa. The etching rate of Ge increases linearly from 11.9 to 19.4 μm/min and surface roughness decreases as the ICP power level increases from 400 to 650 W at SF6 flow rate of 300 sccm. Also, the etching rate of Ge increases by a power law from 8.0 to 16.7 μm/min as the SF6 flow rate increases from 50 to 300 sccm at ICP power of 570 W. OES and XPS studies were carried out using NIST databases. Identifications for some calculated Ritz lines were suggested.

Ключевые слова: germanium, SF6, ICP process, solar cell