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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
Том 23, 2019 Том 22, 2018 Том 21, 2017 Том 20, 2016 Том 19, 2015 Том 18, 2014 Том 17, 2013 Том 16, 2012 Том 15, 2011 Том 14, 2010 Том 13, 2009 Том 12, 2008 Том 11, 2007 Том 10, 2006 Том 9, 2005 Том 8, 2004 Том 7, 2003 Том 6, 2002 Том 5, 2001 Том 4, 2000 Том 3, 1999 Том 2, 1998 Том 1, 1997

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.2018026506
pages 1-6

CHARACTERISTIC FEATURES OF HEATING SEMICONDUCTOR SILICON STRUCTURES DURING RAPID THERMAL TREATMENT IN THE VLSI TECHNOLOGY

Vitalii A. Bondariev
Department of Electrical Devices and High Voltage Technology, Lublin University of Technology, 38D Nadbystrzycka Str., Lublin, 20–618, Poland
Valentina A. Gorushko
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Vladimir A. Pilipenko
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus
Vitaly A. Solodukha
JSC "INTEGRAL" − Holding Management Company, 121A Kazinets Str., Minsk, 220108, Belarus

Краткое описание

By means of the Fourier-spectroscopy method the influence of the conductivity type, doping level, orientation, as well as the state of an idle surface of silicon wafers on the absorption ratio during rapid thermal treatment and, consequently, on the temperature and rate of their heating is shown.