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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
Том 23, 2019 Том 22, 2018 Том 21, 2017 Том 20, 2016 Том 19, 2015 Том 18, 2014 Том 17, 2013 Том 16, 2012 Том 15, 2011 Том 14, 2010 Том 13, 2009 Том 12, 2008 Том 11, 2007 Том 10, 2006 Том 9, 2005 Том 8, 2004 Том 7, 2003 Том 6, 2002 Том 5, 2001 Том 4, 2000 Том 3, 1999 Том 2, 1998 Том 1, 1997

High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v11.i2.120
pages 297-308

EFFECTS OF PLASMA PARAMETERS ON PASSIVATION OF POLYCRYSTALLINE SILICON IN INDUCTIVE LOW PRESSURE HYDROGEN PLASMA

M. Nikravech
Laboratoire de Genie des Precedes Plasmas et Traitement de Surfaces, Universite P. et M. Curie, Ecole Nationale Superieure de Chimie de Paris, 11 rue Pierre et Marie Curie 75005 Paris, France
S. Darwiche
Laboratoire de Genie des Procedes Plasmas et Traitement de Surface - Université Pierre et Mane Curie- ENSCP 11-13, rue Pierre et Marie Curie 75231 Paris Cedex 05 France
S. Awamat
Laboratoire de Génie des Procédés Plasmas et Traitement de Surface − Université Pierre et Marie Curie − Paris 6 - ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex 05, France
Daniel Morvan
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
Jacques Amouroux
Laboratoire de Genie des Precedes Plasmas Universite P. et M. Curie, ENSCP 11 rue P. et M. Curie 75005 Paris France
D. Ballutaud
Laboratoire de Physique des Solides et de Cristallogenese, CNRS, 1 place Aristide Briand, F-92195 Meudon CEDEX, France

Краткое описание

Passivation of crystallographic defects by hydrogen is known to improve the transport properties and to enhance the photovoltaic yield of polycrystalline silicone (poly Si). However, it has been demonstrated that the efficiency of hydrogenation depends on the process used. The treatment of poly Si was performed in an inductive low pressure hydrogen plasma reactor. The aim of this work is to elucidate the relation between the plasma characteristics and the efficiency of hydrogen passivation on a poly Si surface. Optical emission spectroscopy permitted to determine the main excited states of monatomic hydrogen and molecular hydrogen in the plasma. The excitation temperature measured by Boltzmann's method ranged between 4500 and 8000K depending on the plasma gas composition, pressure and applied power. The effects of these parameters on the efficiency of hydrogenation were studied by SMS, EBIC, and hydrogen effusion.