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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes
SJR: 0.137 SNIP: 0.341 CiteScore™: 0.43

ISSN Печать: 1093-3611
ISSN Онлайн: 1940-4360

Выпуски:
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High Temperature Material Processes: An International Quarterly of High-Technology Plasma Processes

DOI: 10.1615/HighTempMatProc.v9.i2.100
pages 279-285

TEOS/O2 GAS PRESSURE AS A CHEMICAL COMPOSITION ADJUSTER OF PLASMA DEPOSITED SIO2 THIN FILMS

A. Panou
Plasma Technology Lab, Dept.Chem. Engineering, University of Pates, P.O.Box 1407,26500 Patra, Greece
Ch. Voulgaris
Plasma Technology Lab, Dept.Chem. Engineering, University of Pates, P.O.Box 1407,26500 Patra, Greece
E. Amanatides
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece
Dimitris Mataras
Plasma Technology Laboratory -Dept. of Chem. Engineering-University of Patras, P.O.Box 1407, 26500 Patra, Greece
Dimitrious E. Rapakoulias
Plasma Technology Lab, Dept. Chem. Engineering, University of Patras, P.O.Box 1407, 26500 Patra, Greece

Краткое описание

The effect of the total gas pressure on the electrical properties of TEOS/O2 RF discharges and on the SiOxCyHz deposition rate and chemical composition was investigated. The experiments were carried out under well controlled electrical conditions and under constant TEOS partial pressure in order to isolate as much as possible the effect of the total pressure on the deposition process. The increase of pressure by a factor of two under constant discharge power was found to significantly enhance the film growth by a factor of six. At the same time the content of −OH was increased and the Si-C content was decreased indicating the very important role of the total gas pressure on the complete removal of the hydroxyl groups and the film stability.