RT Journal Article ID 16f285cf4f0ac5f0 A1 Bulgakov, B. M. A1 Borodkin, Aleksander I. T1 Quasi-Optical Solid-State Oscillators JF Telecommunications and Radio Engineering JO TRE YR 1997 FD 1997-04-01 VO 51 IS 4 SP 1 OP 21 K1 Gunn oscillator K1 open resonator K1 millimeter and submillimeter waves K1 power combining of solid-state oscillators K1 quasi-optical output K1 resonance inhomogeneities K1 rectangular grooves K1 gratings AB Frequency pulling by a high-Q external resonator is among the best investigated methods of frequency stabilization in oscillators. A great variety of stabilization systems implementing the principle has been developed. Some employ open resonators (OR) in the capacity of stabilizing. However, the large size of the OR compared with the wavelength offers some new opportunities. E.g. Wandinger and Nambaldian [1], used an OR for simultaneous stabilization of two oscillators coupled to the resonator through different inputs. The writers treated their own design as a power adder of the two oscillators. The equivalent circuit of the oscillator stabilized by an external resonator represents a system with several degrees of freedom. Such a system is characterized by two or more natural frequencies and adjustment of the frequency change is accompanied both by hysteresis phenomena and jumps of frequency from one branch of the frequency variation curve to another one. Such effects may cause a lot of trouble during system adjustment, limiting the frequency range oVer which frequency is kept stable, and reducing the system stability to external destabilizing factors. The present paper is dedicated to studying the systems in which the oscillator elements are placed inside the OR. It is possible to assume that, similar to the laser, such a device may suggest new possibilities for the design of power adders and offer essential advantages at shorter wavelengths. Proceeding from the problem formulation, the authors consider the OR modifications specially designed for solid-state oscillators and for oscillators with one as well as with several generating elements. In most cases, it is the Gunn diodes that are used as generating elements, however the results are more general in character and can be extended both to IMPATT diodes and transistor-based systems. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,33c8731363039cb6,16f285cf4f0ac5f0.html