RT Journal Article ID 32a514ca2cd188ca A1 Alexeev, G. A. T1 On the Influence of Ions on the Static Potential Distribution in O-Type Devices with the Long-Time Interaction JF Telecommunications and Radio Engineering JO TRE YR 2005 FD 2006-07-14 VO 63 IS 7-12 SP 883 OP 889 AB The influence of ions of residual gas on the static potential distribution in the transverse section of the plane-parallel channel with a strip electron beam has been studied. Peculiarities of formation of the natural ion trap have been investigated depending on the parameter of the electronic charge compensation, the temperature of ionic gas, the coefficient of the channel filling by an electron beam, and the asymmetry coefficient of its arrangement. The results can be used at the design of O-type devices with the long-time interaction. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,09697d14040e5d41,32a514ca2cd188ca.html