RT Journal Article ID 690762661a958ffb A1 Prokhorov, E. D. A1 Medvedev, V. V. A1 Botsula, O. V. T1 Application of Resonance-Tunnel Diodes for Frequency Multiplication at Millimeter Wavelengths JF Telecommunications and Radio Engineering JO TRE YR 2002 FD 2002-01-20 VO 57 IS 1 OP 6 AB Discussed in the paper is frequency multiplication in resonance-tunnel diodes with a variety of current-voltage characteristics. Single-level resonance-tunneling diodes like Al0.2 Ga0.8As/GaAs, In0.53Ga0.47As / AlAs, InAs / AlAs / GaSb and the two-level AlAs / GaAs are considered. As has been found, the highest frequency conversion factors at all harmonics are shown by the two-level resonance-tunneling diode, with or without bias voltage, compared with the single level resonance-tunneling diodes. The high frequency conversion factor for the harmonic components enables obtaining power levels at the harmonics comparable to those of Gunn generators and avalanche-transit time diodes at millimeter wavelengths. PB Begell House LK https://www.dl.begellhouse.com/journals/0632a9d54950b268,602dd49c2bcc592d,690762661a958ffb.html