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THERMAL ANALYSIS OF NANOSCALE ELECTRONIC DEVICES BY SPECTRAL METHODS

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Краткое описание

Transient thermal management of nanoscale devices operating at very high frequencies are particularly sensitive to phase lags between the heat flux and the temperature gradient vectors resulting from phonon collisions and phonon scattering. This phenomenon is investigated in an electronic device consisting of array of MOSFET transistors on a silicon substrate. The governing partial differential equations are solved by a spectral numerical technique. The results indicate that nanoscale devices are indeed vulnerable to the phase-lag effects. In addition, such effects are further amplified by a rapid increase in the heat generation rate due to steep rise in operating voltage.

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