LASER PROCESSING OF SEMICONDUCTOR NANOMATERIALS
This chapter presents a review of recent work on the laser synthesis and functionalization of semiconductor nanostructures and two-dimensional (2D) semiconductor materials in the context of fabricating high-performance electronic devices. Research has been carried out on the laser-induced crystallization of thin films and nanostructures. Work on the crystallization of amorphous precursors in confined domains is discussed. Vapor–liquid–solid (VLS) mechanism has been adopted as a bottom-up approach in the synthesis of semiconducting nanowires (NWs). In contrast to blank heating methods, laser irradiation has high spatial selectivity and precise control of the heating mechanism in the time domain. These attributes enable elucidation of the fundamental process of nanowire nucleation and early stage of nanostructure growth. Site- and shape-selective on-demand direct integration of oriented NWs is accomplished. Growth of discrete silicon nanowires is reported with nanoscale location selectivity by employing near-field laser illumination in conjunction with highly localized electric fields. Control of the location-selective ZnO nanowire growth is accomplished by modulated laser irradiation. Tuning the properties of 2D transition metal dichalcogenides (TMDCs) by modulating the free carrier type and density and composition can offer an exciting new pathway to various practical nanoscale electronics.
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