每年出版 12 期
ISSN 打印: 0040-2508
ISSN 在线: 1943-6009
Indexed in
A 0.7-2.4 GHZ LOW POWER VCO DESIGN WITH INVERSION MOS VARACTOR TUNING
摘要
A 3-stage low power ring voltage-controlled oscillator (VCO) with variable capacitance implemented with the I-MOS varactor has been reported in this paper. Three transistors based NAND gate has been used as an inverter delay stage along with the I-MOS varactor. The tuning of the proposed VCO has been achieved by varying the source/drain tune voltage (Vtune) and substrate bias voltage (Vb) of the I-MOS varactor. Results show that oscillation frequency is tunable from 0.714 GHz to 1.05 1GHz under the control of Vtune that varies from 1V to 2V and Vb that varies from 0V to 3V with 1.8V supply voltage (Vdd). The proposed VCO shows the power consumption of 0.248 mW at 1.8V Vdd. Further by varying the I-MOS varactor width (W) from 4 μm to 12 μm and Vtune from 1V to 2V another frequency range has been obtained from 0.522 GHz to 1.637 GHz at 1.8V Vdd. A range of frequency from 0.702 GHz to 2.491 GHz has been obtained for different values of I-MOS varactor width (W) with Vdd variation from 1.8V to 3V at fixed Vtune = 1V and Vb = 1.8V. The proposed ring VCO shows a phase noise of -102.25 dBc/Hz at 1 MHz offset from the center frequency and the Figure of merit (FoM) is 166.14 dBc/Hz.
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