每年出版 12 期
ISSN 打印: 0040-2508
ISSN 在线: 1943-6009
Indexed in
IMPEDANCE AND GENERATION EFFICIENCY OF A PLANAR DIODE WITH RESONANT TUNNELING BOUNDARIES (RTB) BASED ON GaAs
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摘要
Currently the devices designed for operating in the millimeter and submillimeter wave range are under active investigation. To work in this range one uses 100 ...150 GHz solid-state oscillators with subsequent frequency multiplication of these relatively low frequencies to the required level (to date really to 1 ...2 THz). Semiconductor devices that can be used as oscillators and amplifiers have been proposed previously. The devices of such type are diodes with a negative differential conductivity arising due to the lateral tunneling boundaries and resonant-tunneling boundaries (RTB). The present study considers the electronic processes in the GaAs-based diodes under condition that the RTB length is limited. The dependences of active and reactive impedance components of the planar diode with (RTB) are determined for real diode parameters. It is shown that the frequency possibilities of the diode with RTB are strongly dependent on the boundary location. The generation efficiency and the frequency range are decreasing when RTB moves to the anode.
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Prokhorov, E.D. and Botsula, O.V., Negative differential conductivity of a tunnel side-boundary semiconductor diode.
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Prokhorov, E.D., Botsula, O.V., and Klimenko, О.Ð., Generation and frequency multiplication by GaAs-diodes with tunnel boundaries.
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Prokhorov, E.D., Botsula, O.V., Klimenko, О.Ð., and Storozhenko, I.P., Generation efficiency of "sandwich" resonant-tunneling diodes.
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Schulman, J.N., De Los Santos, H.J., and Chow, D.N., Physics-Based RTB current voltage equation.
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Waho, T., Chen, K.J., and Yamamoto, M., Novel multiple-valued logic gate using resonant tunneling devices.
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Shifren, L.C. and Ferry, D.K., A Wigner function-based quantum ensemble Monte-Carlo study of a resonant tunneling diode.
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Roger Lake and Junyie Yang, A physics based model for the RTD quantum capacitance.
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Ivashchenko, V.M. and Mitin, V.V., Simulation of kinetic phenomena in semiconductors. Monte-Carlo method.
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Prokhorov, E.D., Botsula, O.V., and Klimenko, О.Ð., Impedance characteristics of Ga-As-based planar diode with tunneling boundary.
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Prokhorov E. D., Botsula O. V., Reutina O. A., Influence of lateral borders length on current voltage characteristics and oscillation efficiency of planar diode, 2013 International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves, 2013. Crossref